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A D-Band Dual-Mode Dynamic Frequency Divider in 130-nm SiGe Technology

  • Sining An
  • , Zhongxia Simon He*
  • , Franz Dielacher
  • , Herbert Zirath
  • *此作品的通讯作者
  • Chalmers University of Technology
  • Infineon Technologies AG

科研成果: 期刊稿件文章同行评审

摘要

In this work, a dual-mode (divide-by-2 and divide-by-3) dynamic frequency divider is presented. A tunable delay gated ring oscillator (TDGRO) topology is proposed for dual-mode operation and bandwidth extension. It uses a 130-nm gate length SiGe BiCMOS technology with the $f_{t}$ and $f_{\mathrm {max}}$ of 250 and 370 GHz, respectively. Verification shows that it works at $W$ -band from 70 to 114 GHz (47.8% bandwidth) for divide-by-2 and works at $D$ -band from 105 to 160 GHz (41.5% bandwidth) for divide-by-3. This divider can be used in integrated phase-locked loops (PLLs) at millimeter-wave frequencies.

源语言英语
文章编号9246229
页(从-至)1169-1172
页数4
期刊IEEE Microwave and Wireless Components Letters
30
12
DOI
出版状态已出版 - 12月 2020
已对外发布

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