@inproceedings{25f1d791761a4b58b9535810a35db97e,
title = "A Compact D-Band Power Amplifier with 7.8 dBm Psat in 250 nm InP DHBT",
abstract = "This article presents a compact D-band power amplifier (PA) based on 250 nm InP DHBT, which consists of GSG pad and a 4-stage common-emitter. Electromagnetic (EM) simulation results indicate that the S-parameter exhibit favorable input / output return loss (>8dB) covering the whole D-band (110 - 170 GHz), and provides a peak gain of 23.3 dB at 135 GHz, with a 3dB bandwidth spanning 118 to 155 GHz. The PA is designed to produce a saturated output power (Psat) of 7.8 dBm at 140 GHz, and the Psat within the frequency range of 120 GHz to 182 GHz is over 7 dBm at the cost power of 70 mW while occupying a compact chip size of only 0.3 {\texttimes} 1.1",
keywords = "D-band, indium phosphide (InP) DHBT, millimeter-wave, Power amplifier",
author = "Yumeng Zhou and Yao Li and Weihua Yu",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024 ; Conference date: 28-08-2024 Through 30-08-2024",
year = "2024",
doi = "10.1109/RFIT60557.2024.10812462",
language = "English",
series = "2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2024 - Proceedings",
address = "United States",
}