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A 4-8 GHz Fully-Differential Noise Canceling Low Noise Amplifier in 55-nm CMOS

  • Chao Wang*
  • , Xiaoran Li
  • , Zicheng Liu
  • , Fang Han
  • *此作品的通讯作者
  • Beijing Institute of Technology

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

in this paper, a two-stage low noise amplifier(LNA) design is proposed in the 55 nm CMOS process that features a Fully-Differential noise canceling LNA(FD-NCLNA) structure as the first stage. The proposed LNA utilizes inductance to optimize gain and noise characteristics at high frequency and achieves a maximum gain of 18.4 dB and a minimum NF result of 2.5 dB within the 4-8 GHz range.

源语言英语
主期刊名2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024
出版商Institute of Electrical and Electronics Engineers Inc.
3-4
页数2
ISBN(电子版)9798331530709
DOI
出版状态已出版 - 2024
活动2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024 - Hangzhou, 中国
期限: 25 10月 202427 10月 2024

出版系列

姓名2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024

会议

会议2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024
国家/地区中国
Hangzhou
时期25/10/2427/10/24

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