TY - JOUR
T1 - A 144-fJ/Bit Reliable and Compact TRNG Based on the Diffusive Resistance of 3-D Resistive Random Access Memory
AU - Li, Xiaoran
AU - Wang, Yiming
AU - Yang, Yiming
AU - Lv, Shidong
AU - Luo, Qing
AU - Wang, Xinghua
AU - Xu, Xiaoxin
AU - Lei, Dengyun
AU - Zhang, Feng
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2023/8/1
Y1 - 2023/8/1
N2 - In this work, we harnessed the diffusiveness of the resistant states in 3-D resistive random access memory (RRAM) array and implemented a true random number generator (TRNG). The fluctuation of the resistance states serves as the random source, which is then amplified by peripheral ring oscillator (RO) circuits. The peripheral circuits are fabricated in a 55-nm CMOS process. Measurement results show that the TRNG supports a maximum throughput of 1 Gb/s and passes the NIST test across -40 °C to 125 °C. The RRAM cells enjoy good robustness under high temperature, as the baking experiment shows. The TRNG obviates the need for calibration circuits and requires no startup circuits. The proposed work harvests the fluctuation of analog resistance of RRAM cells, enriching the TRNG family aimed for Internet of Things (IoT) application.
AB - In this work, we harnessed the diffusiveness of the resistant states in 3-D resistive random access memory (RRAM) array and implemented a true random number generator (TRNG). The fluctuation of the resistance states serves as the random source, which is then amplified by peripheral ring oscillator (RO) circuits. The peripheral circuits are fabricated in a 55-nm CMOS process. Measurement results show that the TRNG supports a maximum throughput of 1 Gb/s and passes the NIST test across -40 °C to 125 °C. The RRAM cells enjoy good robustness under high temperature, as the baking experiment shows. The TRNG obviates the need for calibration circuits and requires no startup circuits. The proposed work harvests the fluctuation of analog resistance of RRAM cells, enriching the TRNG family aimed for Internet of Things (IoT) application.
KW - 3-D resistive random access memory (RRAM)
KW - Internet of Things (IoT) applications
KW - true random number generator (TRNG)
UR - https://www.scopus.com/pages/publications/85164383170
U2 - 10.1109/TED.2023.3288839
DO - 10.1109/TED.2023.3288839
M3 - Article
AN - SCOPUS:85164383170
SN - 0018-9383
VL - 70
SP - 4139
EP - 4144
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 8
ER -