@inproceedings{06f4ff3daa3a4434a503c9b66cbcaecd,
title = "3D neural network by monolithic integration of rram array with IGZO FET",
abstract = "We have developed monolithic integration of RRAM array and oxide semiconductor channel access transistor in 3D stack, achieved uniform memory characteristics of 1T1R cells at each layer, and demonstrated basic functionality of XNOR operation as in-memory computing for binary neural network AI applications. The impact of RRAM bit error rate on neural network is also investigated. 3D neural network built by this architecture enables area-efficient, low-power and low-latency computing in machine learning accelerator.",
author = "Masaharu Kobayashi and Jixuan Wu and Fei Mo and Saraya Takuya and Toshiro Hiramoto",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",
year = "2020",
doi = "10.1149/09808.0057ecst",
language = "English",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "8",
pages = "57--61",
editor = "E. Redel and H. Baumgart and G. Wittstock and C. Woll and H. Kitagawa and Allendorf, \{M. D.\} and P. Falcaro and S. Shingubara and Nonnenmann, \{S. S.\} and J. Rupp and G. Adam and R. Dittmann and Y. Yang and B. Magyari-Kope and K. Kobayashi and H. Shima and Y. Saito and Park, \{J. G.\} and G. Bersuker",
booktitle = "PRiME 2020",
address = "United Kingdom",
edition = "8",
}