1.15 GHz image rejection filter with 45 dB image rejection ratio and 8.4 mW DC power in 90 nm CMOS

An'an Li; Yingtao Ding; Zhiming Chen; Baoyong Chi

doi:10.1016/j.mejo.2018.12.003

1.15 GHz image rejection filter with 45 dB image rejection ratio and 8.4 mW DC power in 90 nm CMOS

An'an Li
, Yingtao Ding
, Zhiming Chen^*
, Baoyong Chi

^*此作品的通讯作者

集成电路与电子学院

Beijing Institute of Technology
Tsinghua University

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

A 1.15 GHz image rejection filter in 90 nm CMOS is presented. It consists of two band-pass filter stages and one band-stop filter stage, with the Q-enhancing and frequency stagger-tuning techniques to compensate the loss of low quality factor on-chip passive components and maintain enough bandwidth, respectively. The presented filter has been integrated in one K-band dual down-conversion super-heterodyne receiver and achieves 45 dB image rejection ratio at 140 MHz offset with >22 MHz signal bandwidth. The DC power consumption is 8.4 mW.

源语言	英语
页（从-至）	48-53
页数	6
期刊	Microelectronics
卷	84
DOI	https://doi.org/10.1016/j.mejo.2018.12.003
出版状态	已出版 - 2月 2019

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10.1016/j.mejo.2018.12.003

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@article{6e25cd9e7fca474a954114743251333e,

title = "1.15 GHz image rejection filter with 45 dB image rejection ratio and 8.4 mW DC power in 90 nm CMOS",

abstract = "A 1.15 GHz image rejection filter in 90 nm CMOS is presented. It consists of two band-pass filter stages and one band-stop filter stage, with the Q-enhancing and frequency stagger-tuning techniques to compensate the loss of low quality factor on-chip passive components and maintain enough bandwidth, respectively. The presented filter has been integrated in one K-band dual down-conversion super-heterodyne receiver and achieves 45 dB image rejection ratio at 140 MHz offset with >22 MHz signal bandwidth. The DC power consumption is 8.4 mW.",

keywords = "CMOS, Frequency stagger-tuning, Image rejection filter, Q-enhancing, Super-heterodyne",

author = "An'an Li and Yingtao Ding and Zhiming Chen and Baoyong Chi",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2019",

month = feb,

doi = "10.1016/j.mejo.2018.12.003",

language = "English",

volume = "84",

pages = "48--53",

journal = "Microelectronics",

issn = "0026-2692",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - 1.15 GHz image rejection filter with 45 dB image rejection ratio and 8.4 mW DC power in 90 nm CMOS

AU - Li, An'an

AU - Ding, Yingtao

AU - Chen, Zhiming

AU - Chi, Baoyong

PY - 2019/2

Y1 - 2019/2

N2 - A 1.15 GHz image rejection filter in 90 nm CMOS is presented. It consists of two band-pass filter stages and one band-stop filter stage, with the Q-enhancing and frequency stagger-tuning techniques to compensate the loss of low quality factor on-chip passive components and maintain enough bandwidth, respectively. The presented filter has been integrated in one K-band dual down-conversion super-heterodyne receiver and achieves 45 dB image rejection ratio at 140 MHz offset with >22 MHz signal bandwidth. The DC power consumption is 8.4 mW.

AB - A 1.15 GHz image rejection filter in 90 nm CMOS is presented. It consists of two band-pass filter stages and one band-stop filter stage, with the Q-enhancing and frequency stagger-tuning techniques to compensate the loss of low quality factor on-chip passive components and maintain enough bandwidth, respectively. The presented filter has been integrated in one K-band dual down-conversion super-heterodyne receiver and achieves 45 dB image rejection ratio at 140 MHz offset with >22 MHz signal bandwidth. The DC power consumption is 8.4 mW.

KW - CMOS

KW - Frequency stagger-tuning

KW - Image rejection filter

KW - Q-enhancing

KW - Super-heterodyne

UR - https://www.scopus.com/pages/publications/85059114156

U2 - 10.1016/j.mejo.2018.12.003

DO - 10.1016/j.mejo.2018.12.003

M3 - Article

AN - SCOPUS:85059114156

SN - 0026-2692

VL - 84

SP - 48

EP - 53

JO - Microelectronics

JF - Microelectronics

ER -

1.15 GHz image rejection filter with 45 dB image rejection ratio and 8.4 mW DC power in 90 nm CMOS

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1.15 GHz image rejection filter with 45 dB image rejection ratio and 8.4 mW DC power in 90 nm CMOS