10 Gb/s GaAs PHEMT optical receiver preamplifier

Wei Feng; Tangsheng Chen; Feng Qian; Kai Shao; Fuxiao Li

10 Gb/s GaAs PHEMT optical receiver preamplifier

Wei Feng^*
, Tangsheng Chen
, Feng Qian
, Kai Shao
, Fuxiao Li

^*此作品的通讯作者

Nanjing Electronic Devices Institute

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.

源语言	英语
页（从-至）	77-79+104
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	26
期	1
出版状态	已出版 - 2月 2006
已对外发布	是

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@article{066f67a7db1944a7ba672b5ca76b4327,

title = "10 Gb/s GaAs PHEMT optical receiver preamplifier",

abstract = "This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.",

keywords = "Attenuation compensation, Distributed amplifier, GaAs, PHEMT technology, Preamplifier",

author = "Wei Feng and Tangsheng Chen and Feng Qian and Kai Shao and Fuxiao Li",

year = "2006",

month = feb,

language = "English",

volume = "26",

pages = "77--79+104",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

number = "1",

}

TY - JOUR

T1 - 10 Gb/s GaAs PHEMT optical receiver preamplifier

AU - Feng, Wei

AU - Chen, Tangsheng

AU - Qian, Feng

AU - Shao, Kai

AU - Li, Fuxiao

PY - 2006/2

Y1 - 2006/2

N2 - This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.

AB - This paper briefly analyzes the wide-band superiority of the distributed amplifier. A distributed preamplifier operating at 10 Gb/s was fabricated by NEDI's 0.5 μm GaAs PHEMT process. The preamplifier uses the technology of attenuation compensation and is made up of seven cascode stages. The test result indicates that the distributed transimpedance is suitable for a 10 Gb/s optical communication.

KW - Attenuation compensation

KW - Distributed amplifier

KW - GaAs

KW - PHEMT technology

KW - Preamplifier

UR - https://www.scopus.com/pages/publications/33744753096

M3 - Article

AN - SCOPUS:33744753096

SN - 1000-3819

VL - 26

SP - 77-79+104

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 1

ER -

10 Gb/s GaAs PHEMT optical receiver preamplifier

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