太赫兹波导封装技术的研究与应用

Research on terahertz waveguide packaging technology and design verification in D-band (110~170 GHz) and 220 GHz band, respectively. Based on the wire bonding method, D-band LNA module is developed with self-designed amplifier chip. The module measurement shows the peak gain is 10.8 dB at 139 GHz，the gain higher than 7.8 dB from 137 GHz to 144 GHz, the measured input return loss and output return loss are better than 5 dB and 8.5 dB in operating frequencies, respectively. The tendency of packaged curve is same as the on-chip measured and its value is worse than the on-chip measurement about 5 dB. A waveguide-to-integrated probe transition structure for terahertz band is proposed and verified in 220 GHz. The module measurement shows the return loss is better than 8 dB and the insertion loss is better than 3 dB during 208 GHz to 233 GHz and the best performance is achieved at 224 GHz with insertion loss is 1.3 dB and return loss is 46.4 dB. The waveguide-to-integrated probe transition structure provides experience for development of fully integrated terahertz chip.