二元氧化物绝缘层的溶液法制备及在阻变存储器中的应用

Resistive random access memory (RRAM) is one of the most promising storage technologies due to its high level of integration, simultaneous storage and computing, fast operation rate, and low power consumption. Binary oxide materials are important in the development of RRAM because of their excellent electrical properties and compatibility with complementary metal oxide semiconductor (CMOS). Different from the conventional insulating layer deposition process, the solution-processed insulator is to fabricate thin film from the precursor solution first, and then transform it into an oxide insulating layer by different processes. Therefore, both the precursor solution type and the conversion process directly influence microstructure, chemical composition and electrical properties of the prepared oxide materials. This paper firstly introduces the development of RRAM and its working mechanism; secondly, it reviews the application of solution-processed oxide materials in memristors, focusing on the relationship between the composition of the precursor solution, the transformation mechanism and the performance of the prepared oxide insulating layer materials; finally, it describes the key problems of solution-processed insulating layer materials and outlooks the future development direction.