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乔 婧思
前沿交叉科学研究院
h-index
7384
引用
22
H-指数
根据储存在 Pure 的刊物以及来自 Scopus 的引用文献数量计算
2014
2025
每年的科研成果
概览
指纹图谱
合作网络
科研成果
(59)
相似学者
(19)
指纹图谱
深入其中 Jingsi Qiao 为活跃的研究主题。这些主题标签来自此人的成果。它们共同形成唯一的指纹。
分类
加权
按字母排序
Material Science
Ab Initio Calculation
10%
Anisotropy
25%
Arsenic
10%
Boron Nitride
15%
Carrier Mobility
15%
Carrier Transport
11%
Catalysis
6%
Catalyst Activity
7%
Chalcogenides
8%
Chemical Processing
6%
Chemical Vapor Deposition
7%
Chirality
16%
Contact Resistance
16%
Covalent Organic Framework
20%
Crystalline Material
19%
Density
100%
Dielectric Material
13%
Electronic Component
6%
Electronic Property
20%
Electronic Structure
32%
Epitaxy
10%
Field Effect Transistor
29%
Film
25%
Grain Boundary
6%
Graphene
26%
Heterojunction
43%
Hole Mobility
9%
Layered Material
32%
Magnetic Property
18%
Mechanical Strength
10%
Monolayers
75%
Nanoribbon
8%
Optical Property
11%
Optoelectronics
12%
Organic Field Effect Transistors
13%
Permittivity
6%
Photoluminescence
11%
Physical Property
36%
Platinum
12%
Platinum Diselenide
10%
Scanning Transmission Electron Microscopy
6%
Scanning Tunneling Microscopy
12%
Semimetals
8%
Tantalum
6%
Thin-Film Transistor
13%
Transistor
23%
Transition Metal
12%
Transition Metal Dichalcogenide
46%
Two-Dimensional Material
37%
Ultrathin Films
9%
Physics
Anisotropy
19%
Black Phosphorus
53%
Chirality
6%
Density Functional Theory
10%
Electromagnetic Absorption
13%
Electron Beam
8%
Electronic Structure
19%
Energy Gaps (Solid State)
27%
Exciton
10%
Force Constant
5%
Graphene
6%
Heterojunctions
13%
Layered Material
19%
Magnetic Properties
6%
Optical Properties
6%
Optoelectronics
14%
Phonon
5%
Photoluminescence
8%
Photonics
6%
Physics
12%
Quantum Transport
6%
Stacking
36%
Transition Metal Dichalcogenide
14%
Transport Property
6%
Two-Dimensional Materials
13%
Engineering
Anisotropic
5%
Arsenic
6%
Bonding Mechanism
6%
Chemical Vapor Deposition
5%
Covalent Organic Framework
6%
Electronic State
7%
Engineering
7%
Engineering Strain
6%
Exciton Binding Energy
6%
Growth Mechanism
9%
Harmonic Generation
6%
Heterojunctions
6%
Heterostructures
13%
Interfacial Bonding
6%
Interlayer
14%
Interlayer Space
6%
MoS2
6%
MXene
6%
Nanoelectronics
7%
One Dimensional
10%
Optoelectronics
13%
Passivation
6%
Photodetector
6%
Poisson Ratio
6%
Proximity Effect
6%
Scattered Light
6%
Transition Metal Dichalcogenide
10%
Transmissions
5%
Two Dimensional
8%
Two-Dimensional Materials
8%
Vapor Deposition
5%
