Vapor-solid growth of one- dimensional layer-structured gallium sulfide nanostructures

Guozhen Shen; Di Chen; Po Chiang Chen; Chongwu Zhou

doi:10.1021/nn900133f

Vapor-solid growth of one- dimensional layer-structured gallium sulfide nanostructures

Guozhen Shen^*, Di Chen, Po Chiang Chen, Chongwu Zhou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

131 Citations (Scopus)

Abstract

Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga2O3 heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

Original language	English
Pages (from-to)	1115-1120
Number of pages	6
Journal	ACS Nano
Volume	3
Issue number	5
DOIs	https://doi.org/10.1021/nn900133f
Publication status	Published - 26 May 2009
Externally published	Yes

Keywords

GaS
Nanobelts
Nanowires
Photoluminescence
Semiconductor

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10.1021/nn900133f

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title = "Vapor-solid growth of one- dimensional layer-structured gallium sulfide nanostructures",

abstract = "Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga2O3 heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.",

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AU - Shen, Guozhen

AU - Chen, Di

AU - Chen, Po Chiang

AU - Zhou, Chongwu

PY - 2009/5/26

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N2 - Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga2O3 heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

AB - Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga2O3 heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

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KW - Nanowires

KW - Photoluminescence

KW - Semiconductor

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Vapor-solid growth of one- dimensional layer-structured gallium sulfide nanostructures

Abstract

Keywords

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