Vacuum distillation purification of TlBr materials and research on the properties of TlBr single crystals for room-temperature radiation detectors

Zhi Ping Zheng; Fang Meng; Lin Quan; Jing Wang; Shu Ping Gong; Dong Xiang Zhou

doi:10.3963/j.issn.1671-4431.2011.03.001

Vacuum distillation purification of TlBr materials and research on the properties of TlBr single crystals for room-temperature radiation detectors

Zhi Ping Zheng^*, Fang Meng, Lin Quan, Jing Wang, Shu Ping Gong, Dong Xiang Zhou

^*Corresponding author for this work

Huazhong University of Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Vacuum distillation (VD) was utilized to purify thallium bromide (TlBr) materials. The influences of vacuum distillation process on the properties of the wafers for TlBr detectors were reported. Firstly, thallium bromide (TlBr) was synthesized by chemical precipitation from TlNO₃ and HBr, and purified by vacuum distillation at a temperature of 520~640°C. The purification efficiency and impurity concentration were evaluated by inductively coupled plasma mass spectroscopy (ICP-MS). Then one of the purified materials was chosen to grow crystals with 8 mm diameter by vertical Bridgman method. The result of ICP-MS showed that concentration of impurities decreased by an order of magnitude after vacuum distillation purification. The XRD patterns of the wafers cut from the crystals showed that the crystals were preferentially oriented in the [110] direction. The TlBr wafers had a high resistivity of 10⁹ Ω·cm, as well as better optical properties. The wafers can be used for the preparation of TlBr detectors.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Wuhan Ligong Daxue Xuebao/Journal of Wuhan University of Technology
Volume	33
Issue number	3
DOIs	https://doi.org/10.3963/j.issn.1671-4431.2011.03.001
Publication status	Published - Mar 2011
Externally published	Yes

Keywords

Crystal growth
Crystal performance
Thallium bomide
Vacuum distillation

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10.3963/j.issn.1671-4431.2011.03.001

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@article{01388d4f3e9c42cfb6d6f47013c6b0b1,

title = "Vacuum distillation purification of TlBr materials and research on the properties of TlBr single crystals for room-temperature radiation detectors",

abstract = "Vacuum distillation (VD) was utilized to purify thallium bromide (TlBr) materials. The influences of vacuum distillation process on the properties of the wafers for TlBr detectors were reported. Firstly, thallium bromide (TlBr) was synthesized by chemical precipitation from TlNO3 and HBr, and purified by vacuum distillation at a temperature of 520\textasciitilde{}640°C. The purification efficiency and impurity concentration were evaluated by inductively coupled plasma mass spectroscopy (ICP-MS). Then one of the purified materials was chosen to grow crystals with 8 mm diameter by vertical Bridgman method. The result of ICP-MS showed that concentration of impurities decreased by an order of magnitude after vacuum distillation purification. The XRD patterns of the wafers cut from the crystals showed that the crystals were preferentially oriented in the [110] direction. The TlBr wafers had a high resistivity of 109 Ω·cm, as well as better optical properties. The wafers can be used for the preparation of TlBr detectors.",

keywords = "Crystal growth, Crystal performance, Thallium bomide, Vacuum distillation",

author = "Zheng, \{Zhi Ping\} and Fang Meng and Lin Quan and Jing Wang and Gong, \{Shu Ping\} and Zhou, \{Dong Xiang\}",

year = "2011",

month = mar,

doi = "10.3963/j.issn.1671-4431.2011.03.001",

language = "English",

volume = "33",

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AU - Zheng, Zhi Ping

AU - Meng, Fang

AU - Quan, Lin

AU - Wang, Jing

AU - Gong, Shu Ping

AU - Zhou, Dong Xiang

PY - 2011/3

Y1 - 2011/3

N2 - Vacuum distillation (VD) was utilized to purify thallium bromide (TlBr) materials. The influences of vacuum distillation process on the properties of the wafers for TlBr detectors were reported. Firstly, thallium bromide (TlBr) was synthesized by chemical precipitation from TlNO3 and HBr, and purified by vacuum distillation at a temperature of 520~640°C. The purification efficiency and impurity concentration were evaluated by inductively coupled plasma mass spectroscopy (ICP-MS). Then one of the purified materials was chosen to grow crystals with 8 mm diameter by vertical Bridgman method. The result of ICP-MS showed that concentration of impurities decreased by an order of magnitude after vacuum distillation purification. The XRD patterns of the wafers cut from the crystals showed that the crystals were preferentially oriented in the [110] direction. The TlBr wafers had a high resistivity of 109 Ω·cm, as well as better optical properties. The wafers can be used for the preparation of TlBr detectors.

AB - Vacuum distillation (VD) was utilized to purify thallium bromide (TlBr) materials. The influences of vacuum distillation process on the properties of the wafers for TlBr detectors were reported. Firstly, thallium bromide (TlBr) was synthesized by chemical precipitation from TlNO3 and HBr, and purified by vacuum distillation at a temperature of 520~640°C. The purification efficiency and impurity concentration were evaluated by inductively coupled plasma mass spectroscopy (ICP-MS). Then one of the purified materials was chosen to grow crystals with 8 mm diameter by vertical Bridgman method. The result of ICP-MS showed that concentration of impurities decreased by an order of magnitude after vacuum distillation purification. The XRD patterns of the wafers cut from the crystals showed that the crystals were preferentially oriented in the [110] direction. The TlBr wafers had a high resistivity of 109 Ω·cm, as well as better optical properties. The wafers can be used for the preparation of TlBr detectors.

KW - Crystal growth

KW - Crystal performance

KW - Thallium bomide

KW - Vacuum distillation

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Vacuum distillation purification of TlBr materials and research on the properties of TlBr single crystals for room-temperature radiation detectors

Abstract

Keywords

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