TY - JOUR
T1 - UV-Ozone Surface Modification to Suppress the Crosstalk in the Sb2Se3-Based Broadband Photodetector Array
AU - Li, Jianpeng
AU - Cheng, Wei
AU - Cao, Zixiu
AU - Dong, Jiabin
AU - Hu, Shihao
AU - Meng, Rutao
AU - Xu, Xuejun
AU - Liu, Chuanyu
AU - Xu, Han
AU - Wu, Xu
AU - Wu, Li
AU - Zhang, Yi
N1 - Publisher Copyright:
© 2025 Wiley-VCH GmbH.
PY - 2025
Y1 - 2025
N2 - As a promising material of photodetectors (PDs), antimony selenide (Sb2Se3) and its heterostructure own the advantages of low cost, high absorption coefficient, and excellent optoelectrical properties. However, the imaging application of the Sb2Se3-based PD array is blocked by the key barrier of crosstalk following the single-pixel device study. Here, the crosstalk in the Sb2Se3-based PD array is suppressed with a facile surface modification. Using the UV-ozone treatment, compatible with integrated circuit production, the ZnO/Sb2Se3/Sb2O3 heterostructure is fabricated via the oxidation of the Sb2Se3 surface, and owns enhanced detectivity of 3.63 × 1011 Jones and broadband photodetection from UVto near-infrared region. Moreover, the electrical crosstalk between the pixels is suppressed from 91.06% to 5.37%, improving the imaging contrast. Despite the additional oxide layer, the response time remains at the nanosecond level of 298 and 287 ns, facilitating applications such as real-time imaging. This work provides an effective way with surface modification to suppress the crosstalk in the Sb2Se3-based PD array and breaks the key limit in its photoelectric imaging applications. It is also applicable to various materials, such as GeSe, Sb2Te3, and Bi2Se3, which will also open a new window for semiconductor industrialization.
AB - As a promising material of photodetectors (PDs), antimony selenide (Sb2Se3) and its heterostructure own the advantages of low cost, high absorption coefficient, and excellent optoelectrical properties. However, the imaging application of the Sb2Se3-based PD array is blocked by the key barrier of crosstalk following the single-pixel device study. Here, the crosstalk in the Sb2Se3-based PD array is suppressed with a facile surface modification. Using the UV-ozone treatment, compatible with integrated circuit production, the ZnO/Sb2Se3/Sb2O3 heterostructure is fabricated via the oxidation of the Sb2Se3 surface, and owns enhanced detectivity of 3.63 × 1011 Jones and broadband photodetection from UVto near-infrared region. Moreover, the electrical crosstalk between the pixels is suppressed from 91.06% to 5.37%, improving the imaging contrast. Despite the additional oxide layer, the response time remains at the nanosecond level of 298 and 287 ns, facilitating applications such as real-time imaging. This work provides an effective way with surface modification to suppress the crosstalk in the Sb2Se3-based PD array and breaks the key limit in its photoelectric imaging applications. It is also applicable to various materials, such as GeSe, Sb2Te3, and Bi2Se3, which will also open a new window for semiconductor industrialization.
KW - broadband
KW - crosstalk
KW - dynamic imaging
KW - photodetector array
KW - surface modification
UR - http://www.scopus.com/inward/record.url?scp=105007097104&partnerID=8YFLogxK
U2 - 10.1002/adfm.202510094
DO - 10.1002/adfm.202510094
M3 - Article
AN - SCOPUS:105007097104
SN - 1616-301X
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -