UV-Ozone Surface Modification to Suppress the Crosstalk in the Sb2Se3-Based Broadband Photodetector Array

Jianpeng Li, Wei Cheng, Zixiu Cao, Jiabin Dong, Shihao Hu, Rutao Meng, Xuejun Xu, Chuanyu Liu, Han Xu, Xu Wu*, Li Wu, Yi Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

As a promising material of photodetectors (PDs), antimony selenide (Sb2Se3) and its heterostructure own the advantages of low cost, high absorption coefficient, and excellent optoelectrical properties. However, the imaging application of the Sb2Se3-based PD array is blocked by the key barrier of crosstalk following the single-pixel device study. Here, the crosstalk in the Sb2Se3-based PD array is suppressed with a facile surface modification. Using the UV-ozone treatment, compatible with integrated circuit production, the ZnO/Sb2Se3/Sb2O3 heterostructure is fabricated via the oxidation of the Sb2Se3 surface, and owns enhanced detectivity of 3.63 × 1011 Jones and broadband photodetection from UVto near-infrared region. Moreover, the electrical crosstalk between the pixels is suppressed from 91.06% to 5.37%, improving the imaging contrast. Despite the additional oxide layer, the response time remains at the nanosecond level of 298 and 287 ns, facilitating applications such as real-time imaging. This work provides an effective way with surface modification to suppress the crosstalk in the Sb2Se3-based PD array and breaks the key limit in its photoelectric imaging applications. It is also applicable to various materials, such as GeSe, Sb2Te3, and Bi2Se3, which will also open a new window for semiconductor industrialization.

Original languageEnglish
JournalAdvanced Functional Materials
DOIs
Publication statusAccepted/In press - 2025
Externally publishedYes

Keywords

  • broadband
  • crosstalk
  • dynamic imaging
  • photodetector array
  • surface modification

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