Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

Jie Meng; Han Chun Wu; Jing Jing Chen; Fang Lin; Ya Qing Bie; Igor V. Shvets; Da Peng Yu; Zhi Min Liao

doi:10.1002/smll.201202947

Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

Jie Meng
, Han Chun Wu
, Jing Jing Chen
, Fang Lin
, Ya Qing Bie
, Igor V. Shvets
, Da Peng Yu
, Zhi Min Liao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO₂ substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

Original language	English
Pages (from-to)	2240-2244
Number of pages	5
Journal	Small
Volume	9
Issue number	13
DOIs	https://doi.org/10.1002/smll.201202947
Publication status	Published - 8 Jul 2013
Externally published	Yes

Keywords

field-effect transistors
graphene
hysteresis
photoelectrical responses
trap states

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10.1002/smll.201202947

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keywords = "field-effect transistors, graphene, hysteresis, photoelectrical responses, trap states",

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AU - Meng, Jie

AU - Wu, Han Chun

AU - Chen, Jing Jing

AU - Lin, Fang

AU - Bie, Ya Qing

AU - Shvets, Igor V.

AU - Yu, Da Peng

AU - Liao, Zhi Min

PY - 2013/7/8

Y1 - 2013/7/8

N2 - Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

AB - Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

KW - field-effect transistors

KW - graphene

KW - hysteresis

KW - photoelectrical responses

KW - trap states

UR - https://www.scopus.com/pages/publications/84879666414

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DO - 10.1002/smll.201202947

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ER -

Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

Abstract

Keywords

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