Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric

Zi Chun Liu; Jia Cheng Li; Hui Xia Yang; Han Yang; Yuan Huang; Yi Yun Zhang; Pui To Lai; Yuan Xiao Ma; Ye Liang Wang

doi:10.1016/j.scib.2024.04.059

Ultrathin Sn-doped Ga₂O₃ for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric

Zi Chun Liu
, Jia Cheng Li
, Hui Xia Yang
, Han Yang
, Yuan Huang
, Yi Yun Zhang
, Pui To Lai
, Yuan Xiao Ma^*
, Ye Liang Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Original language	English
Pages (from-to)	1848-1851
Number of pages	4
Journal	Science Bulletin
Volume	69
Issue number	12
DOIs	https://doi.org/10.1016/j.scib.2024.04.059
Publication status	Published - 30 Jun 2024

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10.1016/j.scib.2024.04.059

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@article{d3011a32eaf54fd2911c9b04b3c64737,

title = "Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric",

author = "Liu, \{Zi Chun\} and Li, \{Jia Cheng\} and Yang, \{Hui Xia\} and Han Yang and Yuan Huang and Zhang, \{Yi Yun\} and Lai, \{Pui To\} and Ma, \{Yuan Xiao\} and Wang, \{Ye Liang\}",

year = "2024",

month = jun,

day = "30",

doi = "10.1016/j.scib.2024.04.059",

language = "English",

volume = "69",

pages = "1848--1851",

journal = "Science Bulletin",

issn = "2095-9273",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Ultrathin Sn-doped Ga2O3 for power field-effect transistors

T2 - Si-compatible 4-inch array with high-k gate dielectric

AU - Liu, Zi Chun

AU - Li, Jia Cheng

AU - Yang, Hui Xia

AU - Yang, Han

AU - Huang, Yuan

AU - Zhang, Yi Yun

AU - Lai, Pui To

AU - Ma, Yuan Xiao

AU - Wang, Ye Liang

PY - 2024/6/30

Y1 - 2024/6/30

UR - https://www.scopus.com/pages/publications/85193844810

U2 - 10.1016/j.scib.2024.04.059

DO - 10.1016/j.scib.2024.04.059

M3 - Article

AN - SCOPUS:85193844810

SN - 2095-9273

VL - 69

SP - 1848

EP - 1851

JO - Science Bulletin

JF - Science Bulletin

IS - 12

ER -

Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric

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Ultrathin Sn-doped Ga₂O₃ for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric