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Ultrafast carrier thermalization and cooling dynamics in few-layer MoS2

  • Zhaogang Nie
  • , Run Long
  • , Linfeng Sun
  • , Chung Che Huang
  • , Jun Zhang
  • , Qihua Xiong
  • , Daniel W. Hewak
  • , Zexiang Shen
  • , Oleg V. Prezhdo*
  • , Zhi Heng Loh
  • *Corresponding author for this work
  • Nanyang Technological University
  • University of Southern California
  • University College Dublin
  • University of Southampton

Research output: Contribution to journalArticlepeer-review

Abstract

Femtosecond optical pump-probe spectroscopy with 10 fs visible pulses is employed to elucidate the ultrafast carrier dynamics of few-layer MoS2. A nonthermal carrier distribution is observed immediately following the photoexcitation of the A and B excitonic transitions by the ultrashort, broadband laser pulse. Carrier thermalization occurs within 20 fs and proceeds via both carrier-carrier and carrier-phonon scattering, as evidenced by the observed dependence of the thermalization time on the carrier density and the sample temperature. The n-0.37±0.03 scaling of the thermalization time with carrier density suggests that equilibration of the nonthermal carrier distribution occurs via non-Markovian quantum kinetics. Subsequent cooling of the hot Fermi-Dirac carrier distribution occurs on the ∼0.6 ps time scale via carrier-phonon scattering. Temperature- and fluence-dependence studies reveal the involvement of hot phonons in the carrier cooling process. Nonadiabatic ab initio molecular dynamics simulations, which predict carrier-carrier and carrier-phonon scattering time scales of 40 fs and 0.5 ps, respectively, lend support to the assignment of the observed carrier dynamics.

Original languageEnglish
Pages (from-to)10931-10940
Number of pages10
JournalACS Nano
Volume8
Issue number10
DOIs
Publication statusPublished - 28 Oct 2014
Externally publishedYes

Keywords

  • MoS
  • carrier-carrier scattering
  • carrier-phonon scattering
  • nonthermal
  • quantum kinetics
  • ultrafast dynamics

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