Abstract
An on-chip light source is one of the essential components for integrated photonic circuits and quantum-information processing chips. To date, it has been a great challenge to construct an on-chip light source with high directionality, high collection efficiency, and ultrasmall feature size simultaneously in the optical communication range. Here, an on-chip light source, consisting of a circular paraboloid etched in an aluminum-doped zinc-oxide film, which is an epsilon-near-zero material, is experimentally realized at 1550 nm. Photons emitted from the a PbS quantum-dot cluster placed near the focal point of this paraboloid are reflected into a directional parallel beam due to the large impedance mismatch between aluminum-doped zinc oxide and ambient medium. An ultrasmall emission divergence angle of only ±3â, and an ultrahigh directional emission contrast ratio of 44 dB are achieved from the ultracompact device with a feature size of only 1.5μm. Also, an ultrahigh collection efficiency of up to 92% is predicted by simulation. This work not only opens an alternative way for the realization of integrated photonic devices based on epsilon-near-zero materials, but also provides another method for the precise assembling of composite functional nanostructures.
| Original language | English |
|---|---|
| Article number | 054021 |
| Journal | Physical Review Applied |
| Volume | 12 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 8 Nov 2019 |
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