Ultra-sensitive graphene Hall elements

Le Huang; Zhiyong Zhang; Bingyan Chen; Xiaomeng Ma; Hua Zhong; Lian Mao Peng

doi:10.1063/1.4875597

Ultra-sensitive graphene Hall elements

Le Huang, Zhiyong Zhang^*, Bingyan Chen, Xiaomeng Ma, Hua Zhong, Lian Mao Peng

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

Hall elements were fabricated based on high quality chemical vapor deposition grown graphene, and their performance limit was explored. The as-fabricated graphene Hall element exhibits current-related sensitivity of up to 2093V/AT under 200μA, and magnetic resolution of around 1mG/Hz ^0.5 at 3kHz. This ultrahigh sensitivity and resolution stem from high carrier mobility, small Dirac point voltage of 3V, and low carrier density of about 3×10¹¹cm^-2 in graphene device. The current sensitivity is found to decrease with increasing current bias at large bias, and this phenomenon is attributed to the drain induced Dirac point shift effect in graphene channel.

Original language	English
Article number	183106
Journal	Applied Physics Letters
Volume	104
Issue number	18
DOIs	https://doi.org/10.1063/1.4875597
Publication status	Published - 5 May 2014
Externally published	Yes

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title = "Ultra-sensitive graphene Hall elements",

abstract = "Hall elements were fabricated based on high quality chemical vapor deposition grown graphene, and their performance limit was explored. The as-fabricated graphene Hall element exhibits current-related sensitivity of up to 2093V/AT under 200μA, and magnetic resolution of around 1mG/Hz 0.5 at 3kHz. This ultrahigh sensitivity and resolution stem from high carrier mobility, small Dirac point voltage of 3V, and low carrier density of about 3×1011cm-2 in graphene device. The current sensitivity is found to decrease with increasing current bias at large bias, and this phenomenon is attributed to the drain induced Dirac point shift effect in graphene channel.",

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AU - Huang, Le

AU - Zhang, Zhiyong

AU - Chen, Bingyan

AU - Ma, Xiaomeng

AU - Zhong, Hua

AU - Peng, Lian Mao

PY - 2014/5/5

Y1 - 2014/5/5

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AB - Hall elements were fabricated based on high quality chemical vapor deposition grown graphene, and their performance limit was explored. The as-fabricated graphene Hall element exhibits current-related sensitivity of up to 2093V/AT under 200μA, and magnetic resolution of around 1mG/Hz 0.5 at 3kHz. This ultrahigh sensitivity and resolution stem from high carrier mobility, small Dirac point voltage of 3V, and low carrier density of about 3×1011cm-2 in graphene device. The current sensitivity is found to decrease with increasing current bias at large bias, and this phenomenon is attributed to the drain induced Dirac point shift effect in graphene channel.

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JO - Applied Physics Letters

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Ultra-sensitive graphene Hall elements

Abstract

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