@inproceedings{70cb4814d3f54c878c87cca86e1ec057,
title = "Tunneling leakage current reduction in junctionless transistors using a lightly doped region near drain",
abstract = "A novel double gate junctionless transistor with a lightly doped region near drain (LD-JLT) is investigated through two-dimensional numerical simulations and compared with the conventional double gate junctionless transistor (C-JLT). Simulation results show that the OFF-state current of our proposed LD-JLT is more than eight orders smaller than that of the C-JNT due to the increased tunneling barrier width and reduced band-to-band-tunneling (BTBT) generation rate. Furthermore, the channel length dependency of the LD-JLT and the C-JLT shows that our proposed LD-JLT exhibits superior scaling capability.",
keywords = "Band to band tunneling, Junctionless transistor, Leakage current",
author = "Wenjie Chen and Renrong Liang and Jing Wang and Tsinghua, \{Jun Xu\}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/ISNE.2018.8394684",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--3",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
address = "United States",
}