Abstract
Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures. For a typical piezoresistive nanographene film with a sheet resistance of ∼100 KΩ/â-¡, a gauge factor of more than 600 can be achieved, which is 50× larger than those in previous studies. These films with high sensitivity and low resistivity were also transferred on flexible substrates for device integration for force mapping. Each device shows a high gauge factor of more than 500, a long lifetime of more than 104 cycles, and a fast response time of less than 4 ms, suggesting a great potential in electronic skin applications.
| Original language | English |
|---|---|
| Pages (from-to) | 1622-1629 |
| Number of pages | 8 |
| Journal | ACS Nano |
| Volume | 9 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 24 Feb 2015 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- artificial electronic skin
- controllable size
- graphene
- tunneling effect
- ultrasensitivity
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