Tunable and sizable band gap in silicene by surface adsorption

Ruge Quhe; Ruixiang Fei; Qihang Liu; Jiaxin Zheng; Hong Li; Chengyong Xu; Zeyuan Ni; Yangyang Wang; Dapeng Yu; Zhengxiang Gao; Jing Lu

doi:10.1038/srep00853

Tunable and sizable band gap in silicene by surface adsorption

Ruge Quhe, Ruixiang Fei, Qihang Liu, Jiaxin Zheng, Hong Li, Chengyong Xu, Zeyuan Ni, Yangyang Wang, Dapeng Yu, Zhengxiang Gao, Jing Lu^*

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Article › peer-review

254 Citations (Scopus)

Abstract

Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10 8. Therefore, a way is paved for silicene as the channel of a high-performance FET.

Original language	English
Article number	853
Journal	Scientific Reports
Volume	2
DOIs	https://doi.org/10.1038/srep00853
Publication status	Published - 2012
Externally published	Yes

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abstract = "Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10 8. Therefore, a way is paved for silicene as the channel of a high-performance FET.",

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T1 - Tunable and sizable band gap in silicene by surface adsorption

AU - Quhe, Ruge

AU - Fei, Ruixiang

AU - Liu, Qihang

AU - Zheng, Jiaxin

AU - Li, Hong

AU - Xu, Chengyong

AU - Ni, Zeyuan

AU - Wang, Yangyang

AU - Yu, Dapeng

AU - Gao, Zhengxiang

AU - Lu, Jing

PY - 2012

Y1 - 2012

N2 - Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10 8. Therefore, a way is paved for silicene as the channel of a high-performance FET.

AB - Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controllable by changing the adsorption coverage, with an impressive maximum band gap up to 0.50 eV. The ab initio quantum transport simulation of a bottom-gated FET based on a sodium-covered silicene reveals a transport gap, which is consistent with the band gap, and the resulting on/off current ratio is up to 10 8. Therefore, a way is paved for silicene as the channel of a high-performance FET.

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Tunable and sizable band gap in silicene by surface adsorption

Abstract

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