Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries

  • Han Chun Wu*
  • , Alexander N. Chaika
  • , Tsung Wei Huang
  • , Askar Syrlybekov
  • , Mourad Abid
  • , Victor Yu Aristov
  • , Olga V. Molodtsova
  • , Sergey V. Babenkov
  • , D. Marchenko
  • , Jaime Sánchez-Barriga
  • , Partha Sarathi Mandal
  • , Andrei Yu Varykhalov
  • , Yuran Niu
  • , Barry E. Murphy
  • , Sergey A. Krasnikov
  • , Olaf Lübben
  • , Jing Jing Wang
  • , Huajun Liu
  • , Li Yang
  • , Hongzhou Zhang
  • Mohamed Abid, Yahya T. Janabi, Sergei N. Molotkov, Ching Ray Chang, Igor Shvets
*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 104 by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.

Original languageEnglish
Pages (from-to)8967-8975
Number of pages9
JournalACS Nano
Volume9
Issue number9
DOIs
Publication statusPublished - 22 Sept 2015

Keywords

  • ARPES
  • nanodomain boundary
  • scanning tunneling microscopy
  • transport gap
  • trilayer graphene

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