Transition metal silicide nanowires growth and electrical characterization

Zu Lin Peng; S. Liang; Luo Gen Deng

doi:10.1088/0256-307X/26/12/127301

Transition metal silicide nanowires growth and electrical characterization

Zu Lin Peng^*
, S. Liang
, Luo Gen Deng

^*Corresponding author for this work

School of Physics

Arizona State University
Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10 nm by 5 nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2 × 10^-2 Ωcm.

Original language	English
Article number	127301
Journal	Chinese Physics Letters
Volume	26
Issue number	12
DOIs	https://doi.org/10.1088/0256-307X/26/12/127301
Publication status	Published - 2009

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title = "Transition metal silicide nanowires growth and electrical characterization",

abstract = "We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10 nm by 5 nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2 {\texttimes} 10-2 Ωcm.",

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AU - Peng, Zu Lin

AU - Liang, S.

AU - Deng, Luo Gen

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AB - We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10 nm by 5 nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2 × 10-2 Ωcm.

UR - https://www.scopus.com/pages/publications/73949102394

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DO - 10.1088/0256-307X/26/12/127301

M3 - Article

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SN - 0256-307X

VL - 26

JO - Chinese Physics Letters

JF - Chinese Physics Letters

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Transition metal silicide nanowires growth and electrical characterization

Abstract

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