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Topological piezoelectricity in bulk ferroelectrics

  • Zheng Wu
  • , Yating Ran
  • , Yuanbo Li
  • , Danyang Wang
  • , Xiaobing Li
  • , Feifei Wang*
  • , Anyang Cui*
  • , Xiaoming Shi
  • , Yifan Chen
  • , Feilong Yan
  • , Zhongchen Gao
  • , Zhihua Duan
  • , Liman Sai
  • , Xiaomei Qin
  • , Tao Wang
  • , Yanxue Tang
  • , Xiangyong Zhao
  • , Qiaozhen Zhang
  • , Jie Jiao
  • , Haosu Luo
  • Yiu Wing Mai, Fei Li, Zibin Chen*, Houbing Huang*, Shujun Zhang*
*Corresponding author for this work
  • Shanghai Normal University
  • Hong Kong Polytechnic University
  • Beijing Institute of Technology
  • University of New South Wales
  • University of Shanghai for Science and Technology
  • University of Science and Technology Beijing
  • CAS - Shanghai Institute of Ceramics
  • Xi'an Jiaotong University
  • City University of Hong Kong
  • University of Wollongong

Research output: Contribution to journalArticlepeer-review

Abstract

Ferroelectric topological vortex domains have attracted interest for their topologically protected properties and potential in next-generation electronics. Although extensive research has focused on low-dimensional nanostructures, the role of vortex domains in bulk ferroelectrics remains poorly understood. Here we identify topological vortex structures in bulk Pb(Mg1/3Nb2/3)O3–PbTiO3 crystals and demonstrate their direct role in enhancing the piezoelectric response, establishing a mechanistic link between vortex structures and macroscopic performance. We develop a straightforward and scalable method, mechanically assisted electrical poling, to engineer vortex domain density, which increases the vortex core density from 0.01 μm2 in conventionally poled samples to 21 μm2. This controlled domain engineering leads to a remarkable improvement in the piezoelectric response, primarily attributed to localized strain surrounding the vortex cores. This study advances our understanding of topological structures in bulk ferroelectrics, and opens up a practical pathway to engineer high-performance ferroelectrics for device applications.

Original languageEnglish
JournalNature Materials
DOIs
Publication statusAccepted/In press - 2026
Externally publishedYes

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