Topological phase transition in quasi-one-dimensional bismuth iodide Bi4I4

W. X. Zhao, M. Yang, X. Du, Y. D. Li, K. Y. Zhai, Y. Q. Hu, J. F. Han, Y. Huang, Z. K. Liu, Y. G. Yao, J. C. Zhuang, Y. Du*, J. J. Zhou*, Y. L. Chen*, L. X. Yang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Quasi-one-dimensional (quasi-1D) bismuth iodide Bi4I4 exhibits versatile topological phases of matter including weak topological insulator (WTI) and higher-order topological insulator (HOTI) phases with high tunability in response to external parameters. In this work, performing laser-based angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we reveal the presence of an energy gap on the (100) surface of the low-temperature α-Bi4I4, providing spectroscopic evidence for the HOTI phase. Conversely, the high-temperature β-Bi4I4 harbors gapless Dirac fermions on the (100) surface alongside gapped states on the (001) surface, thereby establishing a WTI phase. By tracking the temperature evolution of the (100) surface states, we unveil a thermal hysteresis of the surface gap in line with the α-β structural phase transition. Our findings directly evidence a temperature-induced topological phase transition from WTI to HOTI in Bi4I4, which paves the way to its potential applications at room temperature.

Original languageEnglish
Article number103
Journalnpj Quantum Materials
Volume9
Issue number1
DOIs
Publication statusPublished - Dec 2024

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