TY - JOUR
T1 - Topological Nodal Line Electrides
T2 - Realization of an Ideal Nodal Line State Nearly Immune from Spin-Orbit Coupling
AU - Zhang, Xiaoming
AU - Fu, Botao
AU - Jin, Lei
AU - Dai, Xuefang
AU - Liu, Guodong
AU - Yao, Yugui
N1 - Publisher Copyright:
Copyright © 2019 American Chemical Society.
PY - 2019/10/24
Y1 - 2019/10/24
N2 - Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of the existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work, we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and electrides simultaneously, and provide new insight into designing excellent NLSs nearly immune from SOC. Since the states near the Fermi level are mostly contributed by non-nucleus-bound interstitial electrons, nodal lines in TNLEs manifest an extremely small SOC-induced gap even possessing heavy elements. In particular, we propose that the family of A2B (A = Ca, Sr, Ba; B = As, Sb, Bi) materials are realistic TNLEs with negligible SOC-induced gaps, which can act as excellent platforms to study the intrinsic properties of TNLEs.
AB - Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of the existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work, we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and electrides simultaneously, and provide new insight into designing excellent NLSs nearly immune from SOC. Since the states near the Fermi level are mostly contributed by non-nucleus-bound interstitial electrons, nodal lines in TNLEs manifest an extremely small SOC-induced gap even possessing heavy elements. In particular, we propose that the family of A2B (A = Ca, Sr, Ba; B = As, Sb, Bi) materials are realistic TNLEs with negligible SOC-induced gaps, which can act as excellent platforms to study the intrinsic properties of TNLEs.
UR - http://www.scopus.com/inward/record.url?scp=85073832581&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.9b08446
DO - 10.1021/acs.jpcc.9b08446
M3 - Article
AN - SCOPUS:85073832581
SN - 1932-7447
VL - 123
SP - 25871
EP - 25876
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 42
ER -