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Topographical investigation of rhenium oxide thin films grown via direct chemical vapor deposition

  • Nasrullah Wazir*
  • , Saddam Hussain
  • , Inayat Ullah
  • , Muhammad Arif
  • , Roh Ullah
  • , Ruibin Liu
  • , Yufeng Hao
  • *Corresponding author for this work
  • School of Electronics and Communication Engineering
  • Quanzhou University of Information Engineering
  • Centre for Quantum Physics
  • Beijing Institute of Technology
  • Department of Medical Lab Technology
  • Abbottabad University of Science and Technology
  • School of Physics and Electronic Information
  • Yunnan Normal University
  • Department of Chemical and Materials Engineering
  • Concordia University
  • Nanjing University

Research output: Contribution to journal › Article › peer-review

Abstract

Nanostructured transition metal oxides (TMOs) are important materials, but they are often challenging to grow directly on substrates. In this work, large-area, continuous ReO3 thin films were successfully synthesized via direct CVD on non-catalytic substrates using NH4ReO4 powder as the precursors. The films were characterized by Raman spectroscopy, SEM, EDS, AFM, and XPS. Raman spectroscopy revealed characteristic ReO3 peaks at 332.52, 886.93, and 956.72 cm−1. EDS confirmed a Re:O atomic ratio of approximately 1:3, while AFM revealed an average film thickness of ∼20 nm. High-resolution XPS demonstrated a predominant Re6+ oxidation state consistent with ReO3, although the presence of additional minor ReOx species cannot be excluded. This direct CVD approach offers a scalable route for the growth of ReO3 thin-film on various substrates for device integration.

Original languageEnglish
Article number141678
JournalMaterials Letters
Volume425
DOIs
Publication statusPublished - 15 Dec 2026
Externally publishedYes

Keywords

  • Chemical vapor deposition
  • Rhenium oxide
  • Thin films
  • Transition metal oxides

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