Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

Yuting Zhang; Swapnadeep Poddar; He Huang; Leilei Gu; Qianpeng Zhang; Yu Zhou; Shuai Yan; Sifan Zhang; Zhitang Song; Baoling Huang; Guozhen Shen; Zhiyong Fan

doi:10.1126/sciadv.abg3788

Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

Yuting Zhang, Swapnadeep Poddar, He Huang, Leilei Gu, Qianpeng Zhang, Yu Zhou, Shuai Yan, Sifan Zhang, Zhitang Song, Baoling Huang, Guozhen Shen, Zhiyong Fan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX₃; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI₃ and ~7 × 10⁹ s ultralong extrapolated retention time for polycrystalline MAPbCl₃ NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI₃ to MAPbCl₃, culminating in the trade-off between the device switching speed and retention time.

Original language	English
Article number	eabg3788
Journal	Science advances
Volume	7
Issue number	36
DOIs	https://doi.org/10.1126/sciadv.abg3788
Publication status	Published - Sept 2021
Externally published	Yes

Access to Document

10.1126/sciadv.abg3788

Cite this

@article{c13cb28ff1a24371b2a0a1f938598807,

title = "Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention",

abstract = "Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX3; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI3 and ~7 × 109 s ultralong extrapolated retention time for polycrystalline MAPbCl3 NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI3 to MAPbCl3, culminating in the trade-off between the device switching speed and retention time.",

author = "Yuting Zhang and Swapnadeep Poddar and He Huang and Leilei Gu and Qianpeng Zhang and Yu Zhou and Shuai Yan and Sifan Zhang and Zhitang Song and Baoling Huang and Guozhen Shen and Zhiyong Fan",

note = "Publisher Copyright: {\textcopyright} 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).",

year = "2021",

month = sep,

doi = "10.1126/sciadv.abg3788",

language = "English",

volume = "7",

journal = "Science advances",

issn = "2375-2548",

publisher = "American Association for the Advancement of Science",

number = "36",

}

TY - JOUR

T1 - Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

AU - Zhang, Yuting

AU - Poddar, Swapnadeep

AU - Huang, He

AU - Gu, Leilei

AU - Zhang, Qianpeng

AU - Zhou, Yu

AU - Yan, Shuai

AU - Zhang, Sifan

AU - Song, Zhitang

AU - Huang, Baoling

AU - Shen, Guozhen

AU - Fan, Zhiyong

N1 - Publisher Copyright: © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

PY - 2021/9

Y1 - 2021/9

N2 - Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX3; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI3 and ~7 × 109 s ultralong extrapolated retention time for polycrystalline MAPbCl3 NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI3 to MAPbCl3, culminating in the trade-off between the device switching speed and retention time.

AB - Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX3; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI3 and ~7 × 109 s ultralong extrapolated retention time for polycrystalline MAPbCl3 NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI3 to MAPbCl3, culminating in the trade-off between the device switching speed and retention time.

UR - http://www.scopus.com/inward/record.url?scp=85114323280&partnerID=8YFLogxK

U2 - 10.1126/sciadv.abg3788

DO - 10.1126/sciadv.abg3788

M3 - Article

C2 - 34516897

AN - SCOPUS:85114323280

SN - 2375-2548

VL - 7

JO - Science advances

JF - Science advances

IS - 36

M1 - eabg3788

ER -

Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

Abstract

Access to Document

Other files and links

Fingerprint

Cite this