Thickness-dependent carriers transport in Sb2Se3 thin film solar cells

Zi Xiu Cao, Chuan Yu Liu, Jian Peng Li, Jia Bin Dong, Shi Hao Hu, Wei Huang Wang*, Xu Wu*, Yi Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The structural design of n-i-p in antimony selenide (Sb2Se3) thin film solar cells can effectively improve the low carrier collection efficiency caused by the lower doping concentration of Sb2Se3. However, the unideal carrier transport ability of the intrinsic light-absorbing layer remains a major limitation for its power conversion efficiency improvement. Herein, it is discovered that the carrier transport in Sb2Se3 thin films strongly depends on the film thickness of the absorber layer in n-i-p structure. By exploring the carrier transport mechanism under different thicknesses of light-absorbing layers, a suitable absorber layer with thickness of 550 nm is demonstrated can effectively separate, transport, and extract photogenerated carriers in Sb2Se3 solar cells. Finally, the vapor transport deposition processed Sb2Se3 solar cells achieve the highest PCE of 7.62% with a short-circuit current density of 30.71 mA·cm−2. This finding provides a constructive guidance for the future researches on Sb2Se3 thin film solar cells with n-i-p structure.

Original languageEnglish
Article number104806
Pages (from-to)3051-3059
Number of pages9
JournalRare Metals
Volume44
Issue number5
DOIs
Publication statusPublished - May 2025
Externally publishedYes

Keywords

  • SbSe solar cell
  • Vapor transport deposition
  • n-i-p structure
  • Thickness-dependent carrier transport

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