Thickness dependence of switching behavior in ferroelectric BiFeO3 thin films: A phase-field simulation

Guoping Cao; Houbing Huang; Xingqiao Ma

doi:10.3390/app7111162

Thickness dependence of switching behavior in ferroelectric BiFeO₃ thin films: A phase-field simulation

Guoping Cao
, Houbing Huang
, Xingqiao Ma^*

^*Corresponding author for this work

University of Science and Technology Beijing

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO₃ thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V) response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.

Original language	English
Article number	1162
Journal	Applied Sciences (Switzerland)
Volume	7
Issue number	11
DOIs	https://doi.org/10.3390/app7111162
Publication status	Published - 13 Nov 2017
Externally published	Yes

Keywords

Bismuth ferrite
Phase-field method
Polarization switching
Thickness effect

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10.3390/app7111162

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title = "Thickness dependence of switching behavior in ferroelectric BiFeO3 thin films: A phase-field simulation",

abstract = "A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO3 thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V) response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.",

keywords = "Bismuth ferrite, Phase-field method, Polarization switching, Thickness effect",

author = "Guoping Cao and Houbing Huang and Xingqiao Ma",

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doi = "10.3390/app7111162",

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T1 - Thickness dependence of switching behavior in ferroelectric BiFeO3 thin films

T2 - A phase-field simulation

AU - Cao, Guoping

AU - Huang, Houbing

AU - Ma, Xingqiao

PY - 2017/11/13

Y1 - 2017/11/13

N2 - A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO3 thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V) response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.

AB - A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO3 thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V) response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.

KW - Bismuth ferrite

KW - Phase-field method

KW - Polarization switching

KW - Thickness effect

UR - https://www.scopus.com/pages/publications/85033661213

U2 - 10.3390/app7111162

DO - 10.3390/app7111162

M3 - Article

AN - SCOPUS:85033661213

SN - 2076-3417

VL - 7

JO - Applied Sciences (Switzerland)

JF - Applied Sciences (Switzerland)

IS - 11

M1 - 1162

ER -

Thickness dependence of switching behavior in ferroelectric BiFeO₃ thin films: A phase-field simulation

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Keywords

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