Thickness combination effects of dual active layers on the performances of InZnO/InSnZnO TFTs

Xi Zhang; Bin Liu; Shuo Zhang; Congyang Wen; Xuyang Li; Haoran Sun; Qi Yao; Yiduo Zhang; Guangcai Yuan; Jian Guo; Feng Wang; Zhinong Yu

doi:10.1016/j.mssp.2025.109551

Thickness combination effects of dual active layers on the performances of InZnO/InSnZnO TFTs

Xi Zhang, Bin Liu, Shuo Zhang, Congyang Wen, Xuyang Li, Haoran Sun, Qi Yao, Yiduo Zhang, Guangcai Yuan, Jian Guo, Feng Wang, Zhinong Yu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Metal oxides have been widely studied as channel materials for thin film transistors (TFTs). In this study, dual active layer InZnO (IZO) and InSnZnO (ITZO) TFTs were designed and their properties were studied. Compared to single layer devices, the dual active layer TFTs demonstrated superior electrical properties, with a mobility enhancement to 50.1 cm² V⁻¹ s⁻¹. In addition, the influence of dual active layers thickness combination on device stability was further explored. Through positive and negative bias stability tests, result showed that IZO (6 nm)/ITZO (14 nm) device exhibited better stability, especially the threshold voltage shift generated by positive bias test of 3600 s was only 0.78V. This study demonstrates that the performance of oxide-based TFTs can be effectively optimized by adjusting the thickness combination of the dual active layers, thereby achieving both high performance and stability.

Original language	English
Article number	109551
Journal	Materials Science in Semiconductor Processing
Volume	194
DOIs	https://doi.org/10.1016/j.mssp.2025.109551
Publication status	Published - 1 Aug 2025
Externally published	Yes

Keywords

Dual active layer
High mobility
ITZO
Stability
Thin film transistors

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10.1016/j.mssp.2025.109551

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@article{7cd3786a073b49149531d451529591fe,

title = "Thickness combination effects of dual active layers on the performances of InZnO/InSnZnO TFTs",

abstract = "Metal oxides have been widely studied as channel materials for thin film transistors (TFTs). In this study, dual active layer InZnO (IZO) and InSnZnO (ITZO) TFTs were designed and their properties were studied. Compared to single layer devices, the dual active layer TFTs demonstrated superior electrical properties, with a mobility enhancement to 50.1 cm2 V−1 s−1. In addition, the influence of dual active layers thickness combination on device stability was further explored. Through positive and negative bias stability tests, result showed that IZO (6 nm)/ITZO (14 nm) device exhibited better stability, especially the threshold voltage shift generated by positive bias test of 3600 s was only 0.78V. This study demonstrates that the performance of oxide-based TFTs can be effectively optimized by adjusting the thickness combination of the dual active layers, thereby achieving both high performance and stability.",

keywords = "Dual active layer, High mobility, ITZO, Stability, Thin film transistors",

author = "Xi Zhang and Bin Liu and Shuo Zhang and Congyang Wen and Xuyang Li and Haoran Sun and Qi Yao and Yiduo Zhang and Guangcai Yuan and Jian Guo and Feng Wang and Zhinong Yu",

note = "Publisher Copyright: {\textcopyright} 2025",

year = "2025",

month = aug,

day = "1",

doi = "10.1016/j.mssp.2025.109551",

language = "English",

volume = "194",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Thickness combination effects of dual active layers on the performances of InZnO/InSnZnO TFTs

AU - Zhang, Xi

AU - Liu, Bin

AU - Zhang, Shuo

AU - Wen, Congyang

AU - Li, Xuyang

AU - Sun, Haoran

AU - Yao, Qi

AU - Zhang, Yiduo

AU - Yuan, Guangcai

AU - Guo, Jian

AU - Wang, Feng

AU - Yu, Zhinong

PY - 2025/8/1

Y1 - 2025/8/1

N2 - Metal oxides have been widely studied as channel materials for thin film transistors (TFTs). In this study, dual active layer InZnO (IZO) and InSnZnO (ITZO) TFTs were designed and their properties were studied. Compared to single layer devices, the dual active layer TFTs demonstrated superior electrical properties, with a mobility enhancement to 50.1 cm2 V−1 s−1. In addition, the influence of dual active layers thickness combination on device stability was further explored. Through positive and negative bias stability tests, result showed that IZO (6 nm)/ITZO (14 nm) device exhibited better stability, especially the threshold voltage shift generated by positive bias test of 3600 s was only 0.78V. This study demonstrates that the performance of oxide-based TFTs can be effectively optimized by adjusting the thickness combination of the dual active layers, thereby achieving both high performance and stability.

AB - Metal oxides have been widely studied as channel materials for thin film transistors (TFTs). In this study, dual active layer InZnO (IZO) and InSnZnO (ITZO) TFTs were designed and their properties were studied. Compared to single layer devices, the dual active layer TFTs demonstrated superior electrical properties, with a mobility enhancement to 50.1 cm2 V−1 s−1. In addition, the influence of dual active layers thickness combination on device stability was further explored. Through positive and negative bias stability tests, result showed that IZO (6 nm)/ITZO (14 nm) device exhibited better stability, especially the threshold voltage shift generated by positive bias test of 3600 s was only 0.78V. This study demonstrates that the performance of oxide-based TFTs can be effectively optimized by adjusting the thickness combination of the dual active layers, thereby achieving both high performance and stability.

KW - Dual active layer

KW - High mobility

KW - ITZO

KW - Stability

KW - Thin film transistors

UR - https://www.scopus.com/pages/publications/105001959046

U2 - 10.1016/j.mssp.2025.109551

DO - 10.1016/j.mssp.2025.109551

M3 - Article

AN - SCOPUS:105001959046

SN - 1369-8001

VL - 194

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 109551

ER -

Thickness combination effects of dual active layers on the performances of InZnO/InSnZnO TFTs

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Keywords

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