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Thermoelectric properties of two-dimensional topological insulators TlBi and TlSb

  • L. J. Gong
  • , R. S. Cheng
  • , Q. Z. Han*
  • , J. Yang*
  • , H. L. Shi
  • , Y. H. Zhao
  • , L. J. Shi
  • , Z. T. Jiang*
  • *Corresponding author for this work
  • Beijing Institute of Technology
  • Beijing Academy of Quantum Information Sciences
  • Shandong Graphenjoy Advanced Material CO. LTD
  • Shanxi Datong University
  • University of Chinese Academy of Sciences
  • National Basic Science Data Center

Research output: Contribution to journalArticlepeer-review

Abstract

A comprehensive investigation into the thermoelectric (TE) properties of the two-dimensional TlBi and TlSb topological insulators has been conducted by means of first-principles calculations and nonequilibrium Green’s function methods. The TlBi (TlSb) monolayers of bandgap 0.413 eV (0.127 eV) show the high (moderate) TE figure of merit Z T ≈ 2.6 (0.6) along the armchair and zigzag directions. In addition, the two Z T peaks along the two directions of the TlSb are almost identical, which are different from the case of the TlBi with the right Z T peak appearing at different chemical potentials. In the TlBi (TlSb) nanoribbons, the influences of the edge states and the bulk states on the TE properties have been fully revealed. The appearance of the edge states in the bulk bandgap enables the nanoribbons to behave as metals, which seriously suppresses the Seebeck coefficients and then the Z Ts. As a consequence, the total Z Ts become much smaller than the separate Z Ts contributed by the edge and bulk states and smaller than the Z Ts of the corresponding monolayers. The mechanism by which edge states influence TE properties provides a helpful reference for understanding the TE properties of analogous two-dimensional topological insulators.

Original languageEnglish
Article number094302
JournalJournal of Applied Physics
Volume139
Issue number9
DOIs
Publication statusPublished - 7 Mar 2026
Externally publishedYes

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