Thermodynamic analysis of the Ga-In-As-Sb-C-H system

Jing Bo Li; Wei Jing Zhang; Chang Rong Li; Zhen Min Du

doi:10.1016/S0022-0248(99)00355-3

Thermodynamic analysis of the Ga-In-As-Sb-C-H system

Jing Bo Li
, Wei Jing Zhang
, Chang Rong Li
, Zhen Min Du

University of Science and Technology Beijing

Research output: Contribution to journal › Article › peer-review

Abstract

The Ga-In-As-Sb-C-H system composed of 8 phases and 74 gaseous species is set up and analyzed thermodynamically to simulate the metalorganic vapor-phase epitaxy (MOVPE) process for (Ga,In)(As,Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors on the amount of input III-V sources are calculated with the conditions defined according to the practical MOVPE processes. The experimental data are collected and compared with the calculated results.

Original language	English
Pages (from-to)	20-26
Number of pages	7
Journal	Journal of Crystal Growth
Volume	207
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(99)00355-3
Publication status	Published - Nov 1999
Externally published	Yes

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title = "Thermodynamic analysis of the Ga-In-As-Sb-C-H system",

abstract = "The Ga-In-As-Sb-C-H system composed of 8 phases and 74 gaseous species is set up and analyzed thermodynamically to simulate the metalorganic vapor-phase epitaxy (MOVPE) process for (Ga,In)(As,Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors on the amount of input III-V sources are calculated with the conditions defined according to the practical MOVPE processes. The experimental data are collected and compared with the calculated results.",

author = "Li, \{Jing Bo\} and Zhang, \{Wei Jing\} and Li, \{Chang Rong\} and Du, \{Zhen Min\}",

year = "1999",

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journal = "Journal of Crystal Growth",

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AU - Zhang, Wei Jing

AU - Li, Chang Rong

AU - Du, Zhen Min

PY - 1999/11

Y1 - 1999/11

N2 - The Ga-In-As-Sb-C-H system composed of 8 phases and 74 gaseous species is set up and analyzed thermodynamically to simulate the metalorganic vapor-phase epitaxy (MOVPE) process for (Ga,In)(As,Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors on the amount of input III-V sources are calculated with the conditions defined according to the practical MOVPE processes. The experimental data are collected and compared with the calculated results.

AB - The Ga-In-As-Sb-C-H system composed of 8 phases and 74 gaseous species is set up and analyzed thermodynamically to simulate the metalorganic vapor-phase epitaxy (MOVPE) process for (Ga,In)(As,Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors on the amount of input III-V sources are calculated with the conditions defined according to the practical MOVPE processes. The experimental data are collected and compared with the calculated results.

UR - https://www.scopus.com/pages/publications/0033327004

U2 - 10.1016/S0022-0248(99)00355-3

DO - 10.1016/S0022-0248(99)00355-3

M3 - Article

AN - SCOPUS:0033327004

SN - 0022-0248

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SP - 20

EP - 26

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Thermodynamic analysis of the Ga-In-As-Sb-C-H system

Abstract

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