Abstract
The system of the MOVPE process for growing the Ga (As, Sb) semiconductor is a Ga-As-Sb-C-H quinary system composed of 7 phases and 68 gaseous species. The calculation method developed recently for the thermodynamic analyses of the MOVPE processes to grow III-V semiconductors was used in this work. The thermodynamic simulations of MOVPE processes were carried out both in the equilibrium states with phase separation of Ga (As, Sb) occurring and in the meta-equilibrium states without the deposition of the second semiconductor phase. The results shown that the MOVPE process proceeds in the meta-equilibrium states at many conditions, and the composition of Ga(As, Sb) can be calculated.
| Original language | English |
|---|---|
| Pages (from-to) | 252-253 |
| Number of pages | 2 |
| Journal | Rare Metals |
| Volume | 16 |
| Issue number | 4 |
| Publication status | Published - 1997 |
| Externally published | Yes |
Keywords
- As
- Ga
- MOVPE
- Sb
- Semiconductor
- Thermodynamic