Theoretical study and rate constants calculation for the reactions of SiH3 radical with SiH3CH3 and SiH 2(CH3)2

Hui Zhang, Gui Ling Zhang, Jing Yao Liu, Miao Sun, B. O. Liu, Z. E.Sheng Li

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The multiple-channel reactions SiH3 + SiH3CH 3 → products and SiH3 + SiH3(CH 3)2 → products are investigated by direct dynamics method. The minimum energy path (MEP) is calculated at the MP2/631+G(d,p) level, and energetic information is further refined by the MC-QCISD method. The rate constants for individual reaction channels are calculated by the improved canonical variational transition state theory (ICVT) with small-curvature tunneling (SCT) correction over the temperature range of 200-2400 K. The theoretical threeparameter expression k1(T) = 2.39 X 10 -23T4.01exp(-2768.72/T) and k2(T) = 9.67 X 1.0-27T4.92exp(-2165.15/T) (in unit of cm3 molecule-1 s-1) are given. Our calculations indicate that hydrogen abstraction channel from SiH group is the major channel because of the smaller barrier height among eight channels considered.

Original languageEnglish
Pages (from-to)403-411
Number of pages9
JournalJournal of Computational Chemistry
Volume31
Issue number2
DOIs
Publication statusPublished - 30 Jan 2010
Externally publishedYes

Keywords

  • Gas-phase reaction
  • Rate constants
  • Transition state

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