The ultraviolet responses of ZnO-based thin-film transistor prepared by sol-gel method

M. Zhang; Z. N. Yu; J. Z. Wang; W. Xue

doi:10.1179/1432891715Z.0000000002202

The ultraviolet responses of ZnO-based thin-film transistor prepared by sol-gel method

M. Zhang, Z. N. Yu^*, J. Z. Wang, W. Xue

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Bottom-gate and top-contact thin-film transistors with ZnO film as a channel layer were fabricated by sol-gel method. The structural and optical properties of the deposited ZnO films were investigated through X-ray diffractometer, scanning electron microscopy and UV-Vis spectrophotometer. ZnO film has a high absorption in the ultraviolet region and c-axis orientation normal to the substrate. The on/off current ratio, channel mobility and threshold voltage of ZnObased thin-film transistors in dark are 10⁵, 0.02 cm²V^-1 s^-1 and 8.3 V, respectively. Under UV light illumination (λ = 365 nm) with an intensity of 2.4 μW/cm², the drain-source current I_DS of thin-film transistor dramatically increases and the photo-to-dark current ratio is greater than 10⁴. The transient response of the device to ultraviolet illumination is also discussed. The results may open the possibility of employing ZnO-thin-film transistors as UV photodetector.

Original language	English
Pages (from-to)	382-386
Number of pages	5
Journal	Materials Research Innovations
Volume	19
DOIs	https://doi.org/10.1179/1432891715Z.0000000002202
Publication status	Published - Dec 2015

Keywords

Photodetector
Sol-gel method
Thin-film transistor
ZnO

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10.1179/1432891715Z.0000000002202

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@article{9426981b0079474094f9c9c75d72a7ac,

title = "The ultraviolet responses of ZnO-based thin-film transistor prepared by sol-gel method",

abstract = "Bottom-gate and top-contact thin-film transistors with ZnO film as a channel layer were fabricated by sol-gel method. The structural and optical properties of the deposited ZnO films were investigated through X-ray diffractometer, scanning electron microscopy and UV-Vis spectrophotometer. ZnO film has a high absorption in the ultraviolet region and c-axis orientation normal to the substrate. The on/off current ratio, channel mobility and threshold voltage of ZnObased thin-film transistors in dark are 105, 0.02 cm2V-1 s-1 and 8.3 V, respectively. Under UV light illumination (λ = 365 nm) with an intensity of 2.4 μW/cm2, the drain-source current IDS of thin-film transistor dramatically increases and the photo-to-dark current ratio is greater than 104. The transient response of the device to ultraviolet illumination is also discussed. The results may open the possibility of employing ZnO-thin-film transistors as UV photodetector.",

keywords = "Photodetector, Sol-gel method, Thin-film transistor, ZnO",

author = "M. Zhang and Yu, {Z. N.} and Wang, {J. Z.} and W. Xue",

note = "Publisher Copyright: {\textcopyright} 2015 W. S. Maney & Son Ltd.",

year = "2015",

month = dec,

doi = "10.1179/1432891715Z.0000000002202",

language = "English",

volume = "19",

pages = "382--386",

journal = "Materials Research Innovations",

issn = "1432-8917",

publisher = "Maney Publishing",

}

TY - JOUR

T1 - The ultraviolet responses of ZnO-based thin-film transistor prepared by sol-gel method

AU - Zhang, M.

AU - Yu, Z. N.

AU - Wang, J. Z.

AU - Xue, W.

PY - 2015/12

Y1 - 2015/12

N2 - Bottom-gate and top-contact thin-film transistors with ZnO film as a channel layer were fabricated by sol-gel method. The structural and optical properties of the deposited ZnO films were investigated through X-ray diffractometer, scanning electron microscopy and UV-Vis spectrophotometer. ZnO film has a high absorption in the ultraviolet region and c-axis orientation normal to the substrate. The on/off current ratio, channel mobility and threshold voltage of ZnObased thin-film transistors in dark are 105, 0.02 cm2V-1 s-1 and 8.3 V, respectively. Under UV light illumination (λ = 365 nm) with an intensity of 2.4 μW/cm2, the drain-source current IDS of thin-film transistor dramatically increases and the photo-to-dark current ratio is greater than 104. The transient response of the device to ultraviolet illumination is also discussed. The results may open the possibility of employing ZnO-thin-film transistors as UV photodetector.

AB - Bottom-gate and top-contact thin-film transistors with ZnO film as a channel layer were fabricated by sol-gel method. The structural and optical properties of the deposited ZnO films were investigated through X-ray diffractometer, scanning electron microscopy and UV-Vis spectrophotometer. ZnO film has a high absorption in the ultraviolet region and c-axis orientation normal to the substrate. The on/off current ratio, channel mobility and threshold voltage of ZnObased thin-film transistors in dark are 105, 0.02 cm2V-1 s-1 and 8.3 V, respectively. Under UV light illumination (λ = 365 nm) with an intensity of 2.4 μW/cm2, the drain-source current IDS of thin-film transistor dramatically increases and the photo-to-dark current ratio is greater than 104. The transient response of the device to ultraviolet illumination is also discussed. The results may open the possibility of employing ZnO-thin-film transistors as UV photodetector.

KW - Photodetector

KW - Sol-gel method

KW - Thin-film transistor

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84953733394&partnerID=8YFLogxK

U2 - 10.1179/1432891715Z.0000000002202

DO - 10.1179/1432891715Z.0000000002202

M3 - Article

AN - SCOPUS:84953733394

SN - 1432-8917

VL - 19

SP - 382

EP - 386

JO - Materials Research Innovations

JF - Materials Research Innovations

ER -

The ultraviolet responses of ZnO-based thin-film transistor prepared by sol-gel method

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Keywords

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