The superconductivity in boron-doped polycrystalline diamond thick films

Z. L. Wang; Q. Luo; L. W. Liu; C. Y. Li; H. X. Yang; H. F. Yang; J. J. Li; X. Y. Lu; Z. S. Jin; L. Lu; C. Z. Gu

doi:10.1016/j.diamond.2005.12.035

The superconductivity in boron-doped polycrystalline diamond thick films

Z. L. Wang
, Q. Luo
, L. W. Liu
, C. Y. Li
, H. X. Yang
, H. F. Yang
, J. J. Li
, X. Y. Lu
, Z. S. Jin
, L. Lu
, C. Z. Gu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 10²⁰ cm^-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for T_c onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high T_c value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.

Original language	English
Pages (from-to)	659-663
Number of pages	5
Journal	Diamond and Related Materials
Volume	15
Issue number	4-8
DOIs	https://doi.org/10.1016/j.diamond.2005.12.035
Publication status	Published - Apr 2006
Externally published	Yes

Keywords

Chemical vapor deposition
Diamond film
Superconductivity
p-type doping

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10.1016/j.diamond.2005.12.035

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title = "The superconductivity in boron-doped polycrystalline diamond thick films",

abstract = "Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.",

keywords = "Chemical vapor deposition, Diamond film, Superconductivity, p-type doping",

author = "Wang, \{Z. L.\} and Q. Luo and Liu, \{L. W.\} and Li, \{C. Y.\} and Yang, \{H. X.\} and Yang, \{H. F.\} and Li, \{J. J.\} and Lu, \{X. Y.\} and Jin, \{Z. S.\} and L. Lu and Gu, \{C. Z.\}",

year = "2006",

month = apr,

doi = "10.1016/j.diamond.2005.12.035",

language = "English",

volume = "15",

pages = "659--663",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

number = "4-8",

}

TY - JOUR

T1 - The superconductivity in boron-doped polycrystalline diamond thick films

AU - Wang, Z. L.

AU - Luo, Q.

AU - Liu, L. W.

AU - Li, C. Y.

AU - Yang, H. X.

AU - Yang, H. F.

AU - Li, J. J.

AU - Lu, X. Y.

AU - Jin, Z. S.

AU - Lu, L.

AU - Gu, C. Z.

PY - 2006/4

Y1 - 2006/4

N2 - Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.

AB - Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.

KW - Chemical vapor deposition

KW - Diamond film

KW - Superconductivity

KW - p-type doping

UR - https://www.scopus.com/pages/publications/33745234037

U2 - 10.1016/j.diamond.2005.12.035

DO - 10.1016/j.diamond.2005.12.035

M3 - Article

AN - SCOPUS:33745234037

SN - 0925-9635

VL - 15

SP - 659

EP - 663

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 4-8

ER -

The superconductivity in boron-doped polycrystalline diamond thick films

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Keywords

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