TY - GEN
T1 - The preparation of AZO films with RF sputtering
AU - Yu, Zhinong
AU - Xu, Jin
AU - Xue, We
AU - Li, Xia
AU - Li, Jinwei
PY - 2008
Y1 - 2008
N2 - ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al 2O3 (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10 -3 Ω ·cm.
AB - ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al 2O3 (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10 -3 Ω ·cm.
KW - AZO thin film
KW - Optical and electrical properties
KW - RF magnetron sputtering
UR - http://www.scopus.com/inward/record.url?scp=41149118083&partnerID=8YFLogxK
U2 - 10.1117/12.791173
DO - 10.1117/12.791173
M3 - Conference contribution
AN - SCOPUS:41149118083
SN - 9780819467669
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - International Symposium on Photoelectronic Detection and Imaging 2007
T2 - International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings
Y2 - 9 September 2007 through 12 September 2007
ER -