The failure mechanism and experimental study of MEMS fuze TSV package at high transient current

With the development in the miniaturization, intellectualization and dexterity of fuze, the 3D package is the most promising technology to realize fuze miniaturization. Through-silicon via (TSV), the key technology of 3D packages, has the advantages of small package size and low power consumption, and is widely used in microelectronic system integration. A TSV-based 3D package technology for MEMS fuze is presented. The work mode of MEMS fuze requires that the resistance change of TSV in the allowable range at a high transient current when the fuze is detonating. Temperature curve of TSV at a high transient current is calculated using the finite element analysis software. Three groups of TSVs are experimented: 40 V, 330 μF capacitor discharge; 10 V, 330 μF capacitor discharge; and 4 V, 100 μF capacitor discharge. The potential failure modes and transient current carrying capacity of TSV are obtained through the comparison of simulation and experimental results. The result shows that the TSV package can meet the normal working of the MEMS fuze in the conditions of 10 V, 330 μF capacitor discharge and 4 V, 100 μF capacitor discharge.