The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Guangchen Zhang; Zhinong Yu; Junchen Dong; Qi Li; Yi Wang; Dedong Han

doi:10.1002/sdtp.16036

The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Guangchen Zhang
, Zhinong Yu
, Junchen Dong
, Qi Li
, Yi Wang
, Dedong Han

School of Optics and Photonics

Beijing Institute of Technology
Beijing Information Science & Technology University
Peking University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm²V^-1s^-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 10⁹. This work drives the application of ITO TFTs in the field of electronics devices.

Original language	English
Pages (from-to)	600-602
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	53
Issue number	S1
DOIs	https://doi.org/10.1002/sdtp.16036
Publication status	Published - 2022
Event	International Conference on Display Technology, ICDT 2022 - Fuzhou, China Duration: 9 Jul 2022 → 12 Jul 2022

Keywords

Indium-Tin-Oxide
annealing atmosphere
electrical properties
thin-film transistors

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10.1002/sdtp.16036

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title = "The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs",

abstract = "The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.",

keywords = "Indium-Tin-Oxide, annealing atmosphere, electrical properties, thin-film transistors",

author = "Guangchen Zhang and Zhinong Yu and Junchen Dong and Qi Li and Yi Wang and Dedong Han",

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TY - JOUR

T1 - The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

AU - Zhang, Guangchen

AU - Yu, Zhinong

AU - Dong, Junchen

AU - Li, Qi

AU - Wang, Yi

AU - Han, Dedong

PY - 2022

Y1 - 2022

N2 - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.

AB - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.

KW - Indium-Tin-Oxide

KW - annealing atmosphere

KW - electrical properties

KW - thin-film transistors

UR - https://www.scopus.com/pages/publications/85141897292

U2 - 10.1002/sdtp.16036

DO - 10.1002/sdtp.16036

M3 - Conference article

AN - SCOPUS:85141897292

SN - 0097-966X

VL - 53

SP - 600

EP - 602

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S1

T2 - International Conference on Display Technology, ICDT 2022

Y2 - 9 July 2022 through 12 July 2022

ER -

The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

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Keywords

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