The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

B. S. Chun; H. C. Wu; M. Abid; I. C. Chu; S. Serrano-Guisan; I. V. Shvets; Daniel S. Choi

doi:10.1063/1.3483232

The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

B. S. Chun
, H. C. Wu
, M. Abid
, I. C. Chu
, S. Serrano-Guisan
, I. V. Shvets
, Daniel S. Choi

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.

Original language	English
Article number	082109
Journal	Applied Physics Letters
Volume	97
Issue number	8
DOIs	https://doi.org/10.1063/1.3483232
Publication status	Published - 23 Aug 2010
Externally published	Yes

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title = "The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films",

abstract = "We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.",

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doi = "10.1063/1.3483232",

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T1 - The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

AU - Chun, B. S.

AU - Wu, H. C.

AU - Abid, M.

AU - Chu, I. C.

AU - Serrano-Guisan, S.

AU - Shvets, I. V.

AU - Choi, Daniel S.

PY - 2010/8/23

Y1 - 2010/8/23

N2 - We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.

AB - We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.

UR - https://www.scopus.com/pages/publications/77956204284

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DO - 10.1063/1.3483232

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VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082109

ER -

The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

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