The analysis of power losses of power inverter based on SiC MOSFETs

Qiang Song; Wei Wang; Shuo Zhang; Yiting Li; Mukhtiar Ahmad

doi:10.1109/GPECOM.2019.8778499

The analysis of power losses of power inverter based on SiC MOSFETs

Qiang Song
, Wei Wang
, Shuo Zhang
, Yiting Li
, Mukhtiar Ahmad

School of Mechanical Engineering

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

21 Citations (Scopus)

Abstract

The power loss is an important factor to be considered in the design stage of power inverter. However, there are a few literatures to systematically analyze the power losses of power inverter, especially for with Silicon Carbide Metallic Oxide semiconductor field effect transistors (SiC MOSFET). This paper investigates the power losses of power inverter based on SiC MOSFETs by considering various factors such as junction temperature, switching frequency, dead-time, PWM modulate mode, control strategies and operation conditions of motor. It can be founded that the total power losses of power inverter are linearly risen with the increase of switching frequency and are reached to the maximum value when the motor operates at the highest speed. From the perspective of power loss distribution of power inverter, the power losses of power inverter are mainly distributed in the power modules, and the power losses of SiC MOSFET chips in the power module account for more than 93.4% of the total power losses of power inverter. It has very important significance for the thermal design, reliability evaluation and parameters selection of power inverter.

Original language	English
Title of host publication	Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	152-157
Number of pages	6
ISBN (Electronic)	9781538680865
DOIs	https://doi.org/10.1109/GPECOM.2019.8778499
Publication status	Published - Jun 2019
Event	1st IEEE Global Power, Energy and Communication Conference, GPECOM 2019 - Nevsehir, Turkey Duration: 12 Jun 2019 → 15 Jun 2019

Publication series

Name	Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019

Conference

Conference	1st IEEE Global Power, Energy and Communication Conference, GPECOM 2019
Country/Territory	Turkey
City	Nevsehir
Period	12/06/19 → 15/06/19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

SiC MOSFET
power inverter
power losses
power modules

Access to Document

10.1109/GPECOM.2019.8778499

Cite this

Song, Q., Wang, W., Zhang, S., Li, Y., & Ahmad, M. (2019). The analysis of power losses of power inverter based on SiC MOSFETs. In Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019 (pp. 152-157). Article 8778499 (Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GPECOM.2019.8778499

Song, Qiang ; Wang, Wei ; Zhang, Shuo et al. / The analysis of power losses of power inverter based on SiC MOSFETs. Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 152-157 (Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019).

@inproceedings{5e49f8f9986d41d38633e4b0b97f0465,

title = "The analysis of power losses of power inverter based on SiC MOSFETs",

abstract = "The power loss is an important factor to be considered in the design stage of power inverter. However, there are a few literatures to systematically analyze the power losses of power inverter, especially for with Silicon Carbide Metallic Oxide semiconductor field effect transistors (SiC MOSFET). This paper investigates the power losses of power inverter based on SiC MOSFETs by considering various factors such as junction temperature, switching frequency, dead-time, PWM modulate mode, control strategies and operation conditions of motor. It can be founded that the total power losses of power inverter are linearly risen with the increase of switching frequency and are reached to the maximum value when the motor operates at the highest speed. From the perspective of power loss distribution of power inverter, the power losses of power inverter are mainly distributed in the power modules, and the power losses of SiC MOSFET chips in the power module account for more than 93.4\% of the total power losses of power inverter. It has very important significance for the thermal design, reliability evaluation and parameters selection of power inverter.",

keywords = "SiC MOSFET, power inverter, power losses, power modules",

author = "Qiang Song and Wei Wang and Shuo Zhang and Yiting Li and Mukhtiar Ahmad",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 1st IEEE Global Power, Energy and Communication Conference, GPECOM 2019 ; Conference date: 12-06-2019 Through 15-06-2019",

year = "2019",

month = jun,

doi = "10.1109/GPECOM.2019.8778499",

language = "English",

series = "Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "152--157",

booktitle = "Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019",

address = "United States",

}

Song, Q, Wang, W, Zhang, S, Li, Y & Ahmad, M 2019, The analysis of power losses of power inverter based on SiC MOSFETs. in Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019., 8778499, Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 152-157, 1st IEEE Global Power, Energy and Communication Conference, GPECOM 2019, Nevsehir, Turkey, 12/06/19. https://doi.org/10.1109/GPECOM.2019.8778499

The analysis of power losses of power inverter based on SiC MOSFETs. / Song, Qiang; Wang, Wei; Zhang, Shuo et al.
Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 152-157 8778499 (Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The analysis of power losses of power inverter based on SiC MOSFETs

AU - Song, Qiang

AU - Wang, Wei

AU - Zhang, Shuo

AU - Li, Yiting

AU - Ahmad, Mukhtiar

PY - 2019/6

Y1 - 2019/6

N2 - The power loss is an important factor to be considered in the design stage of power inverter. However, there are a few literatures to systematically analyze the power losses of power inverter, especially for with Silicon Carbide Metallic Oxide semiconductor field effect transistors (SiC MOSFET). This paper investigates the power losses of power inverter based on SiC MOSFETs by considering various factors such as junction temperature, switching frequency, dead-time, PWM modulate mode, control strategies and operation conditions of motor. It can be founded that the total power losses of power inverter are linearly risen with the increase of switching frequency and are reached to the maximum value when the motor operates at the highest speed. From the perspective of power loss distribution of power inverter, the power losses of power inverter are mainly distributed in the power modules, and the power losses of SiC MOSFET chips in the power module account for more than 93.4% of the total power losses of power inverter. It has very important significance for the thermal design, reliability evaluation and parameters selection of power inverter.

AB - The power loss is an important factor to be considered in the design stage of power inverter. However, there are a few literatures to systematically analyze the power losses of power inverter, especially for with Silicon Carbide Metallic Oxide semiconductor field effect transistors (SiC MOSFET). This paper investigates the power losses of power inverter based on SiC MOSFETs by considering various factors such as junction temperature, switching frequency, dead-time, PWM modulate mode, control strategies and operation conditions of motor. It can be founded that the total power losses of power inverter are linearly risen with the increase of switching frequency and are reached to the maximum value when the motor operates at the highest speed. From the perspective of power loss distribution of power inverter, the power losses of power inverter are mainly distributed in the power modules, and the power losses of SiC MOSFET chips in the power module account for more than 93.4% of the total power losses of power inverter. It has very important significance for the thermal design, reliability evaluation and parameters selection of power inverter.

KW - SiC MOSFET

KW - power inverter

KW - power losses

KW - power modules

UR - https://www.scopus.com/pages/publications/85070654763

U2 - 10.1109/GPECOM.2019.8778499

DO - 10.1109/GPECOM.2019.8778499

M3 - Conference contribution

AN - SCOPUS:85070654763

T3 - Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019

SP - 152

EP - 157

BT - Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1st IEEE Global Power, Energy and Communication Conference, GPECOM 2019

Y2 - 12 June 2019 through 15 June 2019

ER -

Song Q, Wang W, Zhang S, Li Y, Ahmad M. The analysis of power losses of power inverter based on SiC MOSFETs. In Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 152-157. 8778499. (Proceedings - 2019 IEEE 1st Global Power, Energy and Communication Conference, GPECOM 2019). doi: 10.1109/GPECOM.2019.8778499

The analysis of power losses of power inverter based on SiC MOSFETs

Abstract

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UN SDGs

Keywords

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