Terahertz power amplifier integrated with on-chip antenna using GaN TMIC technology

Xu Dong Wang; Xin Lv; Da Lu Guo; Ming Xun Li; Gong Cheng; Jia Shan Liu; Wei Hua Yu

doi:10.11972/j.issn.1001-9014.2019.06.001

Terahertz power amplifier integrated with on-chip antenna using GaN TMIC technology

Xu Dong Wang
, Xin Lv
, Da Lu Guo
, Ming Xun Li
, Gong Cheng
, Jia Shan Liu
, Wei Hua Yu^*

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Beijing Institute of Technology
Hebei Semiconductor Research Institute

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper presents a transmitter-type TMIC integrated with a rectangular microstrip patch antenna and a power amplifier. The TMIC was fabricated with GaN HEMT technology for high power density and efficient integration. The on-chip antenna was designed as a power radiator and a frequency-dependent output load tuner of the power amplifier. Load-pull technique was used to realize a good impedance match between the amplifier and the antenna. Over a bandwidth of 100~110 GHz, the power amplifier can deliver an average output of 25.2 dBm with a power-added efficiency (PAE) of 5.83%. Good radiation characteristics of the TMIC have been achieved, showing a 10-dB bandwidth of 1.5 GHz and an estimated equivalent isotropic radiated power (EIRP) of 25.5 dBm at 109 GHz.

Translated title of the contribution	基于GaN TMIC集成片上天线技术的太赫兹功率放大器
Original language	English
Pages (from-to)	683-689
Number of pages	7
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	38
Issue number	6
DOIs	https://doi.org/10.11972/j.issn.1001-9014.2019.06.001
Publication status	Published - 1 Dec 2019

Keywords

Active integrated antenna
GaN HEMT
Radiation pattern
TMIC technology

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10.11972/j.issn.1001-9014.2019.06.001

Cite this

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title = "Terahertz power amplifier integrated with on-chip antenna using GaN TMIC technology",

abstract = "This paper presents a transmitter-type TMIC integrated with a rectangular microstrip patch antenna and a power amplifier. The TMIC was fabricated with GaN HEMT technology for high power density and efficient integration. The on-chip antenna was designed as a power radiator and a frequency-dependent output load tuner of the power amplifier. Load-pull technique was used to realize a good impedance match between the amplifier and the antenna. Over a bandwidth of 100\textasciitilde{}110 GHz, the power amplifier can deliver an average output of 25.2 dBm with a power-added efficiency (PAE) of 5.83\%. Good radiation characteristics of the TMIC have been achieved, showing a 10-dB bandwidth of 1.5 GHz and an estimated equivalent isotropic radiated power (EIRP) of 25.5 dBm at 109 GHz.",

keywords = "Active integrated antenna, GaN HEMT, Radiation pattern, TMIC technology",

author = "Wang, \{Xu Dong\} and Xin Lv and Guo, \{Da Lu\} and Li, \{Ming Xun\} and Gong Cheng and Liu, \{Jia Shan\} and Yu, \{Wei Hua\}",

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doi = "10.11972/j.issn.1001-9014.2019.06.001",

language = "English",

volume = "38",

pages = "683--689",

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T1 - Terahertz power amplifier integrated with on-chip antenna using GaN TMIC technology

AU - Wang, Xu Dong

AU - Lv, Xin

AU - Guo, Da Lu

AU - Li, Ming Xun

AU - Cheng, Gong

AU - Liu, Jia Shan

AU - Yu, Wei Hua

PY - 2019/12/1

Y1 - 2019/12/1

N2 - This paper presents a transmitter-type TMIC integrated with a rectangular microstrip patch antenna and a power amplifier. The TMIC was fabricated with GaN HEMT technology for high power density and efficient integration. The on-chip antenna was designed as a power radiator and a frequency-dependent output load tuner of the power amplifier. Load-pull technique was used to realize a good impedance match between the amplifier and the antenna. Over a bandwidth of 100~110 GHz, the power amplifier can deliver an average output of 25.2 dBm with a power-added efficiency (PAE) of 5.83%. Good radiation characteristics of the TMIC have been achieved, showing a 10-dB bandwidth of 1.5 GHz and an estimated equivalent isotropic radiated power (EIRP) of 25.5 dBm at 109 GHz.

AB - This paper presents a transmitter-type TMIC integrated with a rectangular microstrip patch antenna and a power amplifier. The TMIC was fabricated with GaN HEMT technology for high power density and efficient integration. The on-chip antenna was designed as a power radiator and a frequency-dependent output load tuner of the power amplifier. Load-pull technique was used to realize a good impedance match between the amplifier and the antenna. Over a bandwidth of 100~110 GHz, the power amplifier can deliver an average output of 25.2 dBm with a power-added efficiency (PAE) of 5.83%. Good radiation characteristics of the TMIC have been achieved, showing a 10-dB bandwidth of 1.5 GHz and an estimated equivalent isotropic radiated power (EIRP) of 25.5 dBm at 109 GHz.

KW - Active integrated antenna

KW - GaN HEMT

KW - Radiation pattern

KW - TMIC technology

UR - https://www.scopus.com/pages/publications/85079357233

U2 - 10.11972/j.issn.1001-9014.2019.06.001

DO - 10.11972/j.issn.1001-9014.2019.06.001

M3 - Article

AN - SCOPUS:85079357233

SN - 1001-9014

VL - 38

SP - 683

EP - 689

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 6

ER -

Terahertz power amplifier integrated with on-chip antenna using GaN TMIC technology

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Keywords

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