Abstract
Aligned InN nanowires were synthesized by a template-assisted two-step method. The as-synthesized aligned InN nanowires were of single crystal structure and exhibited good electrical properties with a carrier mobility of 93.8 cm2 V-1 s-1 and a strong photoluminescence emission peak at 740 nm at room-temperature. The alignment characteristic makes it more convenient to integrate the nanowires into nanodevices. The two-step method provides an effective and low-cost road for ordered nitride nanowires in a controllable way.
| Original language | English |
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| Pages (from-to) | 6806-6809 |
| Number of pages | 4 |
| Journal | RSC Advances |
| Volume | 2 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2012 |