Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

Zhi Ling Hou; Mao Sheng Cao; Jie Yuan; Wei Li Song

doi:10.1088/1674-1056/19/1/017702

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇

Zhi Ling Hou
, Mao Sheng Cao^*
, Jie Yuan
, Wei Li Song

^*Corresponding author for this work

Beijing Institute of Technology
Beijing University of Chemical Technology
Minzu University of China

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

This paper reports that single-phase γ-Y₂Si ₂O₇ is prepared via a sufficient blending and cold-pressed sintering technique from Y₂O₃ powder and SiO₂ nanopowder. It studies the dielectric properties of γ-Y₂Si ₂O₇ as a function of the temperature and frequency. The γ-Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y₂Si₂O₇ differing from that of SiO ₂ is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

Original language	English
Article number	017702
Journal	Chinese Physics B
Volume	19
Issue number	1
DOIs	https://doi.org/10.1088/1674-1056/19/1/017702
Publication status	Published - 2010

Keywords

Dielectric properties
Low dielectric loss
Structural relaxation polarization
γ-YSiO

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@article{7cf3495f85c246de834acf46ded86f01,

title = "Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7",

abstract = "This paper reports that single-phase γ-Y2Si 2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si 2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.",

keywords = "Dielectric properties, Low dielectric loss, Structural relaxation polarization, γ-YSiO",

author = "Hou, \{Zhi Ling\} and Cao, \{Mao Sheng\} and Jie Yuan and Song, \{Wei Li\}",

year = "2010",

doi = "10.1088/1674-1056/19/1/017702",

language = "English",

volume = "19",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

AU - Hou, Zhi Ling

AU - Cao, Mao Sheng

AU - Yuan, Jie

AU - Song, Wei Li

PY - 2010

Y1 - 2010

N2 - This paper reports that single-phase γ-Y2Si 2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si 2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

AB - This paper reports that single-phase γ-Y2Si 2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si 2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

KW - Dielectric properties

KW - Low dielectric loss

KW - Structural relaxation polarization

KW - γ-YSiO

UR - https://www.scopus.com/pages/publications/74849126504

U2 - 10.1088/1674-1056/19/1/017702

DO - 10.1088/1674-1056/19/1/017702

M3 - Article

AN - SCOPUS:74849126504

SN - 1674-1056

VL - 19

JO - Chinese Physics B

JF - Chinese Physics B

IS - 1

M1 - 017702

ER -

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇

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Keywords

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