Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells

G. Wang; A. Balocchi; D. Lagarde; C. R. Zhu; T. Amand; P. Renucci; Z. W. Shi; W. X. Wang; B. L. Liu; X. Marie

doi:10.1063/1.4811555

Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells

G. Wang^*
, A. Balocchi
, D. Lagarde
, C. R. Zhu
, T. Amand
, P. Renucci
, Z. W. Shi
, W. X. Wang
, B. L. Liu
, X. Marie

^*Corresponding author for this work

CAS - Institute of Physics
Université de Toulouse

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We demonstrate the electrical control of the electron spin relaxation in GaAs/AlGaAs multiple quantum wells grown on (111)A substrate. By embedding the wells in a NIP structure, the application of an external bias yields a large increase of the electron spin relaxation time due to the compensation of the Dresselhaus spin-splitting by the Rashba one. Depending on the direction of the applied electric field, the electron spin relaxation can be slowed-down or sped-up. It can be tuned by a factor 50 at 75 K and still by a factor 2 at 250 K.

Original language	English
Article number	242408
Journal	Applied Physics Letters
Volume	102
Issue number	24
DOIs	https://doi.org/10.1063/1.4811555
Publication status	Published - 17 Jun 2013
Externally published	Yes

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title = "Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells",

abstract = "We demonstrate the electrical control of the electron spin relaxation in GaAs/AlGaAs multiple quantum wells grown on (111)A substrate. By embedding the wells in a NIP structure, the application of an external bias yields a large increase of the electron spin relaxation time due to the compensation of the Dresselhaus spin-splitting by the Rashba one. Depending on the direction of the applied electric field, the electron spin relaxation can be slowed-down or sped-up. It can be tuned by a factor 50 at 75 K and still by a factor 2 at 250 K.",

author = "G. Wang and A. Balocchi and D. Lagarde and Zhu, \{C. R.\} and T. Amand and P. Renucci and Shi, \{Z. W.\} and Wang, \{W. X.\} and Liu, \{B. L.\} and X. Marie",

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doi = "10.1063/1.4811555",

language = "English",

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issn = "0003-6951",

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T1 - Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells

AU - Wang, G.

AU - Balocchi, A.

AU - Lagarde, D.

AU - Zhu, C. R.

AU - Amand, T.

AU - Renucci, P.

AU - Shi, Z. W.

AU - Wang, W. X.

AU - Liu, B. L.

AU - Marie, X.

PY - 2013/6/17

Y1 - 2013/6/17

N2 - We demonstrate the electrical control of the electron spin relaxation in GaAs/AlGaAs multiple quantum wells grown on (111)A substrate. By embedding the wells in a NIP structure, the application of an external bias yields a large increase of the electron spin relaxation time due to the compensation of the Dresselhaus spin-splitting by the Rashba one. Depending on the direction of the applied electric field, the electron spin relaxation can be slowed-down or sped-up. It can be tuned by a factor 50 at 75 K and still by a factor 2 at 250 K.

AB - We demonstrate the electrical control of the electron spin relaxation in GaAs/AlGaAs multiple quantum wells grown on (111)A substrate. By embedding the wells in a NIP structure, the application of an external bias yields a large increase of the electron spin relaxation time due to the compensation of the Dresselhaus spin-splitting by the Rashba one. Depending on the direction of the applied electric field, the electron spin relaxation can be slowed-down or sped-up. It can be tuned by a factor 50 at 75 K and still by a factor 2 at 250 K.

UR - https://www.scopus.com/pages/publications/84879821676

U2 - 10.1063/1.4811555

DO - 10.1063/1.4811555

M3 - Article

AN - SCOPUS:84879821676

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242408

ER -

Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells

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