Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

G. Feng; H. C. Wu; J. F. Feng; J. M.D. Coey

doi:10.1063/1.3614000

Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

G. Feng^*
, H. C. Wu
, J. F. Feng
, J. M.D. Coey

^*Corresponding author for this work

Trinity College Dublin
National Institute of Standards and Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlO_x barriers and (Co/Pt)₃ multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)₃ stacks. The different temperature dependence of two (Co/Pt)₃ stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlO_x barrier.

Original language	English
Article number	042502
Journal	Applied Physics Letters
Volume	99
Issue number	4
DOIs	https://doi.org/10.1063/1.3614000
Publication status	Published - 25 Jul 2011
Externally published	Yes

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title = "Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy",

abstract = "We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature dependence of two (Co/Pt)3 stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlOx barrier.",

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AU - Feng, G.

AU - Wu, H. C.

AU - Feng, J. F.

AU - Coey, J. M.D.

PY - 2011/7/25

Y1 - 2011/7/25

N2 - We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature dependence of two (Co/Pt)3 stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlOx barrier.

AB - We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature dependence of two (Co/Pt)3 stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlOx barrier.

UR - https://www.scopus.com/pages/publications/79961037618

U2 - 10.1063/1.3614000

DO - 10.1063/1.3614000

M3 - Article

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SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042502

ER -

Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

Abstract

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