Synthesis of semimetal a 3 Bi (A = Na, K) thin films by molecular beam epitaxy

  • Jing Wen*
  • , Hua Guo
  • , Chen Hui Yan
  • , Zhen Yu Wang
  • , Kai Chang
  • , Peng Deng
  • , Teng Zhang
  • , Zhi Dong Zhang
  • , Shuai Hua Ji
  • , Li Li Wang
  • , Ke He
  • , Xu Cun Ma
  • , Xi Chen
  • , Qi Kun Xue
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

Three-dimensional (3D) Dirac cones are predicted to reside in semimetals A 3 Bi (A = Na, K). By using molecular beam epitaxy (MBE) and scanning tunneling microscopy (STM), we have successfully established the growth conditions for Na 3 Bi thin films on Si(1 1 1)-7 x 7, and determined that the lattice of Na 3 Bi is rotated by 30 degree with respect to that of Si(1 1 1)-7 x 7. The Na3Bi/Si(1 1 1)-7 x 7 thin film was further used as the substrate for the growth of K 3 Bi. The 3D Dirac-cone-like electronic band structures of Na 3 Bi and K 3 Bi have been clearly revealed by angle resolved photoelectron spectroscopy (ARPES).

Original languageEnglish
Pages (from-to)213-217
Number of pages5
JournalApplied Surface Science
Volume327
DOIs
Publication statusPublished - 1 Feb 2015
Externally publishedYes

Keywords

  • ARPES
  • K Bi
  • MBE
  • Na Bi
  • STM

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