Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Faheem K. Butt; Misbah Mirza; Chuanbao Cao; Faryal Idrees; Muhammad Tahir; Muhammad Safdar; Zulfiqar Ali; M. Tanveer; Imran Aslam

doi:10.1039/c4ce00267a

Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Faheem K. Butt
, Misbah Mirza
, Chuanbao Cao^*
, Faryal Idrees
, Muhammad Tahir
, Muhammad Safdar
, Zulfiqar Ali
, M. Tanveer
, Imran Aslam

^*Corresponding author for this work

School of Material Science and Engineering

Beijing Institute of Technology
National Center for Nanoscience and Technology

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.

Original language	English
Pages (from-to)	3470-3473
Number of pages	4
Journal	CrystEngComm
Volume	16
Issue number	17
DOIs	https://doi.org/10.1039/c4ce00267a
Publication status	Published - 7 May 2014

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1039/c4ce00267a

Cite this

@article{45e0c0a94b0947bea287333f24cadae2,

title = "Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties",

abstract = "For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.",

author = "Butt, \{Faheem K.\} and Misbah Mirza and Chuanbao Cao and Faryal Idrees and Muhammad Tahir and Muhammad Safdar and Zulfiqar Ali and M. Tanveer and Imran Aslam",

year = "2014",

month = may,

day = "7",

doi = "10.1039/c4ce00267a",

language = "English",

volume = "16",

pages = "3470--3473",

journal = "CrystEngComm",

issn = "1466-8033",

publisher = "Royal Society of Chemistry",

number = "17",

}

TY - JOUR

T1 - Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

AU - Butt, Faheem K.

AU - Mirza, Misbah

AU - Cao, Chuanbao

AU - Idrees, Faryal

AU - Tahir, Muhammad

AU - Safdar, Muhammad

AU - Ali, Zulfiqar

AU - Tanveer, M.

AU - Aslam, Imran

PY - 2014/5/7

Y1 - 2014/5/7

N2 - For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.

AB - For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.

UR - https://www.scopus.com/pages/publications/84898757141

U2 - 10.1039/c4ce00267a

DO - 10.1039/c4ce00267a

M3 - Article

AN - SCOPUS:84898757141

SN - 1466-8033

VL - 16

SP - 3470

EP - 3473

JO - CrystEngComm

JF - CrystEngComm

IS - 17

ER -

Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this