Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Faheem K. Butt; Misbah Mirza; Chuanbao Cao; Faryal Idrees; Muhammad Tahir; Muhammad Safdar; Zulfiqar Ali; M. Tanveer; Imran Aslam

doi:10.1039/c4ce00267a

Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Faheem K. Butt, Misbah Mirza, Chuanbao Cao^*, Faryal Idrees, Muhammad Tahir, Muhammad Safdar, Zulfiqar Ali, M. Tanveer, Imran Aslam

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.

Original language	English
Pages (from-to)	3470-3473
Number of pages	4
Journal	CrystEngComm
Volume	16
Issue number	17
DOIs	https://doi.org/10.1039/c4ce00267a
Publication status	Published - 7 May 2014

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abstract = "For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.",

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AU - Butt, Faheem K.

AU - Mirza, Misbah

AU - Cao, Chuanbao

AU - Idrees, Faryal

AU - Tahir, Muhammad

AU - Safdar, Muhammad

AU - Ali, Zulfiqar

AU - Tanveer, M.

AU - Aslam, Imran

PY - 2014/5/7

Y1 - 2014/5/7

N2 - For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.

AB - For the first time, high quality SnSe nanowires were synthesized via chemical vapour deposition (CVD). The synthesized SnSe nanowires are single crystalline. The length of the nanowires is in tens of microns with an average diameter of about 30-40 nm. Further, the optical and electrical properties reveal the potential of SnSe nanowires for photovoltaic and optical devices. These studies will enable significant advancements of the next generation photodetection and solar cell applications.

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Synthesis of mid-infrared SnSe nanowires and their optoelectronic properties

Abstract

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